Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates | |
X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen | |
2020 | |
发表期刊 | Journal of Alloys and Compounds |
ISSN | 0925-8388 |
卷号 | 814页码:6 |
摘要 | The effect of AlGaN back-barrier on AlGaN/GaN high electron mobility transistors (HEMTs) using freestanding GaN wafer has been investigated in this work. With the introducing back-barrier structure, the leakage path underneath the buffer (native nitrogen-vacancies and GaOx compounds of the HVPE-grown free-standing GaN surface) layer can be suppressed by lift-up the conduction band. As compared with AlGaN/GaN HEMTs on SiC wafer, AlGaN/GaN HEMTs on free-standing GaN wafer show enhanced drain current ( 700 mA/mm), improved transconductance (143 mS/mm), less current collapse (12%), higher current gain cut-off frequency (13 GHz), and maximum stable gain cut-off frequency (24 GHz), which is attributed to the higher epi quality layer on free-standing GaN wafer. (C) 2019 Elsevier B.V. All rights reserved. |
DOI | 10.1016/j.jallcom.2019.152293 |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/64304 |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates[J]. Journal of Alloys and Compounds,2020,814:6. |
APA | X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen.(2020).Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates.Journal of Alloys and Compounds,814,6. |
MLA | X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen."Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates".Journal of Alloys and Compounds 814(2020):6. |
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