Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates

doi:10.1016/j.jallcom.2019.152293

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	Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates
	X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
	2020
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	814 页码:6
摘要	The effect of AlGaN back-barrier on AlGaN/GaN high electron mobility transistors (HEMTs) using freestanding GaN wafer has been investigated in this work. With the introducing back-barrier structure, the leakage path underneath the buffer (native nitrogen-vacancies and GaOx compounds of the HVPE-grown free-standing GaN surface) layer can be suppressed by lift-up the conduction band. As compared with AlGaN/GaN HEMTs on SiC wafer, AlGaN/GaN HEMTs on free-standing GaN wafer show enhanced drain current ( 700 mA/mm), improved transconductance (143 mS/mm), less current collapse (12%), higher current gain cut-off frequency (13 GHz), and maximum stable gain cut-off frequency (24 GHz), which is attributed to the higher epi quality layer on free-standing GaN wafer. (C) 2019 Elsevier B.V. All rights reserved.
DOI	10.1016/j.jallcom.2019.152293
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收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64304
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates[J]. Journal of Alloys and Compounds,2020,814:6.
APA	X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen.(2020).Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates.Journal of Alloys and Compounds,814,6.
MLA	X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen."Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates".Journal of Alloys and Compounds 814(2020):6.

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