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Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1
作者:  Ben,Jianwei;  Sun,Xiaojuan;  Jia,Yuping;  Jiang,Ke;  Shi,Zhiming;  Wu,You;  Kai,Cuihong;  Wang,Yong;  Luo,Xuguang;  Feng,Zhe Chuan;  Li,Dabing
收藏  |  浏览/下载：305/0  |  提交时间：2019/08/21
Refractive index  AlN  Threading dislocation density  Nanoscale strain field around dislocations  
Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors 期刊论文
Photonics Research, 2019, 卷号: 7, 期号: 10, 页码: 1127-1133
作者:  Y.Wu;  Z.Li;  K.-W.Ang;  Y.Jia;  Z.Shi;  Z.Huang;  W.Yu;  X.Sun;  X.Liu;  D.Li
浏览  |  Adobe PDF(1690Kb)  |  收藏  |  浏览/下载：181/60  |  提交时间：2020/08/24
Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors  
286 nm monolithic multicomponent system 期刊论文
Japanese Journal of Applied Physics, 2019, 卷号: 58, 期号: 1, 页码: 5
作者:  J.L.Yuan;  Y.Jiang;  Z.Shi;  X.M.Gao;  Y.J.Wang;  X.J.Sun
浏览  |  Adobe PDF(614Kb)  |  收藏  |  浏览/下载：203/74  |  提交时间：2020/08/24
light-emitting-diodes,integration,photodetectors,photonics,algan,leds,Physics  
High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate 期刊论文
Optics Express, 2019, 卷号: 27, 期号: 20, 页码: A1506-A1516
作者:  S.J.Zhou;  H.H.Xu;  B.Tang;  Y.C.Liu;  H.Wan;  J.H.Miao
Adobe PDF(3290Kb)  |  收藏  |  浏览/下载：119/48  |  提交时间：2020/08/24
wall-plug efficiency,extraction efficiency,enhancement,titanium,contact,stress,layer,films,Optics  
Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 4, 页码: 6
作者:  C.Yang;  H.W.Liang;  Z.Z.Zhang;  X.C.Xia;  H.Q.Zhang;  R.S.Shen
Adobe PDF(1090Kb)  |  收藏  |  浏览/下载：167/48  |  提交时间：2020/08/24
Ga2O3 single crystal,solar-blind,photodetector,high temperature,ultraviolet photodetectors,growth,performance,detectors,film,Physics  
High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 8, 页码: 10
作者:  Q.Zhao;  J.H.Miao;  S.J.Zhou;  C.Q.Gui;  B.Tang;  M.L.Liu
浏览  |  Adobe PDF(2541Kb)  |  收藏  |  浏览/下载：153/68  |  提交时间：2020/08/24
VLED,silicon substrate,current spreading,Au-In eutectic bonding,laser lift-off,lift-off,leds,enhancement,fabrication,performance,sapphire,Science & Technology - Other Topics,Materials Science  
Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 2, 页码: 9
作者:  J.Zhao;  X.H.Ding;  J.H.Miao;  J.F.Hu;  H.Wan;  S.J.Zhou
浏览  |  Adobe PDF(3485Kb)  |  收藏  |  浏览/下载：165/55  |  提交时间：2020/08/24
UV LEDs,double-layer ITO,pinhole pattern,current spreading,light,output power,thin-films,transparent,electrodes,efficiency,leds,surface,blue,inactivation,enhancement,irradiation,Science & Technology - Other Topics,Materials Science  
Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8
作者:  H.Wan;  B.Tang;  N.Li;  S.J.Zhou;  C.Q.Gui;  S.Liu
浏览  |  Adobe PDF(4909Kb)  |  收藏  |  浏览/下载：133/42  |  提交时间：2020/08/24
GaN-based UV LED,wet chemical etching,prism-structured sidewall,crystal orientation,light extraction,efficiency,surface,plane,enhancement,extraction,layer,Science & Technology - Other Topics,Materials Science  
Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps 期刊论文
Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873
作者:  K.Jiang;  X.J.Sun;  J.W.Ben;  Z.M.Shi;  Y.P.Jia;  Y.Wu;  C.H.Kai
浏览  |  Adobe PDF(5687Kb)  |  收藏  |  浏览/下载：238/54  |  提交时间：2020/08/24
potential fluctuations,gan films,alxga1-xn,sapphire,quality,localization,relaxation,inversion  
Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors 期刊论文
Photonics Research, 2019, 卷号: 7, 期号: 3, 页码: 311-317
作者:  X.K.Liu;  Y.X.Chen;  D.B.Li;  S.W.Wang;  C.C.Ting;  L.Chen
浏览  |  Adobe PDF(1124Kb)  |  收藏  |  浏览/下载：163/54  |  提交时间：2020/08/24
mos2 atomic layers,large-area,thin-layers,graphene,growth,optoelectronics,hysteresis,Optics