High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate

doi:10.1364/oe.27.0a1506

CIOMP OpenIR

	High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate
	S.J.Zhou; H.H.Xu; B.Tang; Y.C.Liu; H.Wan; J.H.Miao
	2019
发表期刊	Optics Express
ISSN	1094-4087
卷号	27 期号:20 页码:A1506-A1516
摘要	High-power and reliable GaN-based vertical light-emitting diodes (V-LEDs) on 4-inch silicon substrate were fabricated and characterized in this article. The metallization scheme reliability was improved by depositing the Pt/Ti films that surround the compressed Ag/TiW films to protect it from environmental humidity. We demonstrated that although current crowding in V-LEDs was not as severe as that in lateral light-emitting diodes (L-LEDs), high current density around the opaque metal n-electrode in V-LEDs remained a problem. A SiO2 current blocking layer (CBL) was incorporated in V-LEDs to modify the current distribution. Roughening the emitting surface of V-LEDs with KOH and H3PO4 etchant was compared and the influence of surface roughening on the emission property of V-LEDs was studied. The high-power V-LEDs showed low forward voltage with small series resistance and high light output power (LOP) without saturation up to 1300 mA. Under 350 mA injection current, V-LEDs achieved an excellent light output power (LOP) of 501 mW with the peak emission wavelength at 453 nm. The prominent output performance of V-LEDs demonstrated in this work confirmed that integrating the optimized metallization scheme, SiO2 CBL and surface texturing by KOH wet etching is an effective approach to higher performance V-LEDs. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
关键词	wall-plug efficiency,extraction efficiency,enhancement,titanium,contact,stress,layer,films,Optics
DOI	10.1364/oe.27.0a1506
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/62731
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	S.J.Zhou,H.H.Xu,B.Tang,et al. High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate[J]. Optics Express,2019,27(20):A1506-A1516.
APA	S.J.Zhou,H.H.Xu,B.Tang,Y.C.Liu,H.Wan,&J.H.Miao.(2019).High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate.Optics Express,27(20),A1506-A1516.
MLA	S.J.Zhou,et al."High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate".Optics Express 27.20(2019):A1506-A1516.

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