Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3

doi:10.1088/1674-1056/28/4/048502

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	Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3
	C.Yang; H.W.Liang; Z.Z.Zhang; X.C.Xia; H.Q.Zhang; R.S.Shen
	2019
发表期刊	Chinese Physics B
ISSN	1674-1056
卷号	28 期号:4 页码:6
摘要	A solar-blind photodetector is fabricated on single crystal Ga2O3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet (UV) transmittance. The quantum efficiency is about 400% at 42 V. The Ga2O3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible (= 3213) and solar-blind/UV (= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature (RT) to 85.8 degrees C. The photodetector maintains a high reversibility and response speed, even at high temperatures.
关键词	Ga2O3 single crystal,solar-blind,photodetector,high temperature,ultraviolet photodetectors,growth,performance,detectors,film,Physics
DOI	10.1088/1674-1056/28/4/048502
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/62894
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C.Yang,H.W.Liang,Z.Z.Zhang,et al. Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3[J]. Chinese Physics B,2019,28(4):6.
APA	C.Yang,H.W.Liang,Z.Z.Zhang,X.C.Xia,H.Q.Zhang,&R.S.Shen.(2019).Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3.Chinese Physics B,28(4),6.
MLA	C.Yang,et al."Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3".Chinese Physics B 28.4(2019):6.

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