Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors | |
Y.Wu; Z.Li; K.-W.Ang; Y.Jia; Z.Shi; Z.Huang; W.Yu; X.Sun; X.Liu; D.Li | |
2019 | |
发表期刊 | Photonics Research |
ISSN | 23279125 |
卷号 | 7期号:10页码:1127-1133 |
摘要 | With the increasing demand for high integration and multi-color photodetection for both military and civilian applications, the research of multi-wavelength detectors has become a new research hotspot. However, current research has been mainly in visible dual- or multi-wavelength detectors, while integration of both visible light and ultraviolet (UV) dual-wavelength detectors has rarely been studied. In this work, large-scale and high-quality monolayer MoS2 was grown by the chemical vapor deposition method on transparent free-standing GaN substrate. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors was demonstrated using common semiconductor fabrication technologies such as photolithography, argon plasma etching, and metal deposition. High performance of a 280 nm and 405 nm dual-wavelength photodetector was realized. The responsivity of the UV detector reached 172.12 A/W, while that of the visible detector reached 17.5 A/W. Meanwhile, both photodetectors achieved high photocurrent gain, high external quantum efficiency, high normalized detection rate, and low noise equivalent power. Our study extends the future application of dual-wavelength detectors for image sensing and optical communication. 2019 Chinese Laser Press |
关键词 | Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors |
DOI | 10.1364/PRJ.7.001127 |
URL | 查看原文 |
收录类别 | EI |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/62940 |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | Y.Wu,Z.Li,K.-W.Ang,et al. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors[J]. Photonics Research,2019,7(10):1127-1133. |
APA | Y.Wu.,Z.Li.,K.-W.Ang.,Y.Jia.,Z.Shi.,...&D.Li.(2019).Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors.Photonics Research,7(10),1127-1133. |
MLA | Y.Wu,et al."Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors".Photonics Research 7.10(2019):1127-1133. |
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