Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors

doi:10.1364/prj.7.000311

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	Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors
	X.K.Liu; Y.X.Chen; D.B.Li; S.W.Wang; C.C.Ting; L.Chen
	2019
发表期刊	Photonics Research (IF:6.099[JCR-2019],5.64[5-Year])
ISSN	2327-9125
卷号	7 期号:3 页码:311-317
摘要	Molybdenum disulfide (MoS2)-based phototransistors are attractive for optical electronics in a large-scale size, such as transparent touch screens. However, most of the work done over the past decade has been on an opaque SiO2/Si wafer with a small size (micrometer to millimeter). In this work, a large-scale multilayer MoS2-based phototransistor has been fabricated on a transparent freestanding gallium nitride (GaN) wafer using a scalable chemical vapor deposition method. Due to the near lattice match and small thermal expansion mismatch between GaN and MoS2, the as-grown multilayer MoS2-on-GaN film shows high material quality in terms of low full width at half-maximum (similar to 5.16 cm(-1)) for the E-2g(1) Raman mode and a high absorption coefficient (similar to 10(6) cm(-1)) in the wavelength range of 405-638 nm. Under a wavelength of 405 nm at an incident power of 2 mWand applied voltage of 9 V, the fabricated MoS2-on-GaN phototransistor achieved a maximum responsivity of 17.2 A/W, a photocurrent gain of 53.6, and an external quantum efficiency of 5289%, with specific detectivity (similar to 10(10)-10(12) Jones) and low noise equivalent power (10(-12)-10(-14) W/Hz(1/2)) in the visible range of 405-638 nm. A typical response time of 0.1-4 s in the ambient air has also been recorded for the demonstrated MoS2-on-GaN phototransistor. Our work paves a technologic stepping stone for MoS2-based phototransistors for multifunctional transparent and touch-based optoelectronics in the future. (C) 2019 Chinese Laser Press
关键词	mos2 atomic layers,large-area,thin-layers,graphene,growth,optoelectronics,hysteresis,Optics
DOI	10.1364/prj.7.000311
收录类别	SCI ; EI
语种	英语
引用统计	正在获取...
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63178
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X.K.Liu,Y.X.Chen,D.B.Li,et al. Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors[J]. Photonics Research,2019,7(3):311-317.
APA	X.K.Liu,Y.X.Chen,D.B.Li,S.W.Wang,C.C.Ting,&L.Chen.(2019).Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors.Photonics Research,7(3),311-317.
MLA	X.K.Liu,et al."Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors".Photonics Research 7.3(2019):311-317.

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