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Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1
Authors:  Ben,Jianwei;  Sun,Xiaojuan;  Jia,Yuping;  Jiang,Ke;  Shi,Zhiming;  Wu,You;  Kai,Cuihong;  Wang,Yong;  Luo,Xuguang;  Feng,Zhe Chuan;  Li,Dabing
Favorite  |  View/Download:50/0  |  Submit date:2019/08/21
Refractive index  AlN  Threading dislocation density  Nanoscale strain field around dislocations  
Full-duplex light communication with a monolithic multicomponent system 期刊论文
LIGHT-SCIENCE & APPLICATIONS, 2018, 卷号: 7, 页码: 7
Authors:  Wang, Yongjin;  Wang, Xin;  Zhu, Bingcheng;  Shi, Zheng;  Yuan, Jialei;  Gao, Xumin;  Liu, Yuhuai;  Sun, Xiaojuan;  Li, Dabing;  Amano, Hiroshi
View  |  Adobe PDF(1608Kb)  |  Favorite  |  View/Download:117/34  |  Submit date:2019/08/26
si substrate  diode  integration  electron  devices  Optics  
Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes 期刊论文
Micromachines, 2018, 卷号: 9, 期号: 12, 页码: 9
Authors:  Zhou, S. J.;  Xu, H. H.;  Liu, M. L.;  Liu, X. T.;  Zhao, J.;  Li, N.;  Liu, S.
View  |  Adobe PDF(2744Kb)  |  Favorite  |  View/Download:61/19  |  Submit date:2019/09/17
flip-chip light-emitting diodes  distributed Bragg reflector  light  output power  external quantum efficiency  quantum-well  p-type  leds  performance  wavelength  contacts  ito/dbr  laser  power  fabrication  Science & Technology - Other Topics  Instruments & Instrumentation  
Defect evolution in AlN templates on PVD-AlN-sapphire substrates by thermal annealing 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 32, 页码: 4623-4629
Authors:  Ben, J. W.;  Sun, X. J.;  Jia, Y. P.;  Jiang, K.;  Shi, Z. M.;  Liu, H. N.;  Wang, Y.;  Kai, C. H.;  Wu, Y.;  Li, D. B.
View  |  Adobe PDF(4418Kb)  |  Favorite  |  View/Download:100/37  |  Submit date:2019/09/17
light-emitting-diodes  high-quality aln  growth  temperature  sapphire  algan  efficiency  ratio  Chemistry  Crystallography  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
Authors:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
View  |  Adobe PDF(1681Kb)  |  Favorite  |  View/Download:80/22  |  Submit date:2019/09/17
Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering  
High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes 期刊论文
Journal of Materials Science-Materials in Electronics, 2018, 卷号: 29, 期号: 11, 页码: 9077-9082
Authors:  Han, W. Y.;  Zhang, Z. W.;  Li, Z. M.;  Chen, Y. R.;  Song, H.;  Miao, G. Q.;  Fan, F.;  Chen, H. F.;  Liu, Z.;  Jiang, H.
View  |  Adobe PDF(1849Kb)  |  Favorite  |  View/Download:91/26  |  Submit date:2019/09/17
p-i-n  photodetectors  template  films  Engineering  Materials Science  Physics  
Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core 期刊论文
Journal of Luminescence, 2018, 卷号: 198, 页码: 178-182
Authors:  Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.
View  |  Adobe PDF(628Kb)  |  Favorite  |  View/Download:37/14  |  Submit date:2019/09/17
molecular-beam epitaxy  plasmon  Optics  
Ultraviolet electroluminescence from a n-ZnO filmp-GaN heterojunction under both forward and reverse bias 期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 42, 页码: 11368-11373
Authors:  Ai, Q.;  Liu, K. W.;  Ma, H. Y.;  Yang, J. L.;  Chen, X.;  Li, B. H.;  Shen, D. Z.
View  |  Adobe PDF(2735Kb)  |  Favorite  |  View/Download:62/18  |  Submit date:2019/09/17
light-emitting-diodes  microwire  barriers  band  Materials Science  Physics  
The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD 期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 18, 页码: 4936-4942
Authors:  Chen, Y. R.;  Zhang, Z. W.;  Jiang, H.;  Li, Z. M.;  Miao, G. Q.;  Song, H.
View  |  Adobe PDF(4100Kb)  |  Favorite  |  View/Download:82/29  |  Submit date:2019/09/17
threading dislocations  nucleation layer  gan  temperature  sapphire  Materials Science  Physics  
The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors 期刊论文
Physica Status Solidi a-Applications and Materials Science, 2018, 卷号: 215, 期号: 2, 页码: 5
Authors:  Chen, Y. R.;  Zhang, Z. W.;  Li, Z. M.;  Jiang, H.;  Miao, G. Q.;  Song, H.
View  |  Adobe PDF(1064Kb)  |  Favorite  |  View/Download:68/16  |  Submit date:2019/09/17
AlGaN  inserted layers  p-i-n structures  ultraviolet photodetectors  suppression  diodes  Materials Science  Physics