High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

doi:10.3390/nano9081178

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	High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
	Q.Zhao; J.H.Miao; S.J.Zhou; C.Q.Gui; B.Tang; M.L.Liu
	2019
发表期刊	Nanomaterials
卷号	9 期号:8 页码:10
摘要	We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au-In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry-Perot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.
关键词	VLED,silicon substrate,current spreading,Au-In eutectic bonding,laser lift-off,lift-off,leds,enhancement,fabrication,performance,sapphire,Science & Technology - Other Topics,Materials Science
DOI	10.3390/nano9081178
收录类别	SCI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/62753
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Q.Zhao,J.H.Miao,S.J.Zhou,et al. High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate[J]. Nanomaterials,2019,9(8):10.
APA	Q.Zhao,J.H.Miao,S.J.Zhou,C.Q.Gui,B.Tang,&M.L.Liu.(2019).High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate.Nanomaterials,9(8),10.
MLA	Q.Zhao,et al."High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate".Nanomaterials 9.8(2019):10.

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