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Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers 期刊论文
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2020, 卷号: 260, 页码: 10
作者:  D. N. Talwar, H. H. Lin and Z. C. Feng
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Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence 期刊论文
Materials, 2020, 卷号: 13, 期号: 19, 页码: 10
作者:  Y. Song,Y. Y. Chen,L. G. Zhang,Y. G. Zeng,C. Qiu,L. Liang,Y. X. Lei,P. Jia,L. Qin,Y. Q. Ning and L. J. Wang
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Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文
Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6
作者:  C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li
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Epitaxial growth of polarization-graded AlGaN-based solar-blind ultraviolet photodetectors on pre-grown AlN templates 期刊论文
Materials Letters, 2020, 卷号: 281, 页码: 4
作者:  Y. R. Chen,Z. W. Zhang,G. Q. Miao,H. Jiang,Z. M. Li and H. Song
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Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
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Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system 期刊论文
Materials Science in Semiconductor Processing, 2020, 卷号: 118, 页码: 5
作者:  G. H. Tang,F. Yan and X. L. Chen
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Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate 期刊论文
Crystals, 2020, 卷号: 10, 期号: 7, 页码: 12
作者:  Y. Lei,H. Wan,B. Tang,S. Y. Lan,J. H. Miao,Z. H. Wan,Y. C. Liu and S. J. Zhou
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors 期刊论文
Nanoscale Advances, 2020, 卷号: 2, 期号: 5, 页码: 1854-1858
作者:  Y. Wu,X. J. Sun,Z. M. Shi,Y. P. Jia,K. Jiang,J. W. Ben,C. H. Kai,Y. Wang,W. Lu and D. B. Li
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Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes 期刊论文
Ecs Journal of Solid State Science and Technology, 2020, 卷号: 9, 期号: 4, 页码: 5
作者:  H. Wan,S. J. Zhou,S. Y. Lan and C. Q. Gui
浏览  |  Adobe PDF(1103Kb)  |  收藏  |  浏览/下载：124/46  |  提交时间：2021/07/06