Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system

doi:10.1016/j.mssp.2020.105210

CIOMP OpenIR

	Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system
	G. H. Tang,F. Yan and X. L. Chen
	2020
发表期刊	Materials Science in Semiconductor Processing
ISSN	1369-8001
卷号	118 页码:5
摘要	At present, most of the III -V semiconductor photocathodes, such as GaAs, GaN and AlGaN photocathodes are activated by Cs/O at room temperature. In order to analyze the influence of different activation conditions on the performance of AlGaN photocathode, and investigate the mechanism of surface activation, five AlGaN photo-cathodes were activated with different conditions in an ultra-high vacuum system under a pressure of 10(-8) Pa. Three samples were activated by Cs/O under different temperatures at room temperature (about 25 degrees C), high temperature (about 60 degrees C) and low temperature (about-50 degrees C), respectively. One sample was activated by Rb/O at room temperature. Besides, one more sample was activated by Cs/O at room temperature to study the stability of AlGaN photocathode after activation. The results show that the performance of AlGaN photocathode could be affected greatly by activation conditions, and the mechanism was analyzed. The effect of excessive Cs treatment after activation on the stability of AlGaN photocathode was studied.
DOI	10.1016/j.mssp.2020.105210
URL	查看原文
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64841
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	G. H. Tang,F. Yan and X. L. Chen. Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system[J]. Materials Science in Semiconductor Processing,2020,118:5.
APA	G. H. Tang,F. Yan and X. L. Chen.(2020).Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system.Materials Science in Semiconductor Processing,118,5.
MLA	G. H. Tang,F. Yan and X. L. Chen."Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system".Materials Science in Semiconductor Processing 118(2020):5.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Research on activati（867KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载