Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy | |
| Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li | |
| 2020 | |
| Source Publication | Applied Physics Letters
 |
| ISSN | 0003-6951 |
| Volume | 117Issue:5Pages:5 |
| Abstract | In the present work, improved crystal quality of GaN on a graphene-covered sapphire substrate was achieved compared to GaN grown on a bare sapphire substrate, and the growth mechanism of GaN quasi-van der Waals epitaxy with an AlN nucleation layer was clarified using metal-organic chemical vapor deposition. The in situ N-doping of graphene by an NH3 source during AlN growth was responsible for AlN nucleation. The first-principles calculation indicated that N atoms doped initially at the step edges of graphene and subsequently at its center and AlN nuclei followed the same sequence, which is consistent with experimental observations of nucleation. The lower migration barrier of Al atoms (0.07eV) on graphene created larger AlN nuclei compared to that on bare sapphire (0.21eV), leading to improved quality of the upper GaN epilayer with lower defect density. This work offers guidance for precisely controlling the nucleation morphology and density of GaN base materials and thus realizing high-quality epitaxial materials and related high-performance devices by quasi-van der Waals epitaxy. |
| DOI | 10.1063/5.0016054 |
| URL | 查看原文 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ciomp.ac.cn/handle/181722/64594 |
| Collection | 中国科学院长春光学精密机械与物理研究所 |
| Recommended Citation GB/T 7714 | Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy[J]. Applied Physics Letters,2020,117(5):5. |
| APA | Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li.(2020).Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy.Applied Physics Letters,117(5),5. |
| MLA | Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li."Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy".Applied Physics Letters 117.5(2020):5. |
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| Chen-2020-Improved n（2009KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Download | |
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