CIOMP OpenIR
Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate
Y. Lei,H. Wan,B. Tang,S. Y. Lan,J. H. Miao,Z. H. Wan,Y. C. Liu and S. J. Zhou
2020
发表期刊Crystals
ISSN2073-4352
卷号10期号:7页码:12
摘要Fabricating GaN-based light-emitting diodes (LEDs) on a silicon (Si) substrate, which is compatible with the widely employed complementary metal-oxide-semiconductor (CMOS) circuits, is extremely important for next-generation high-performance electroluminescence devices. We conducted a systematic investigation of the optical properties of vertical LEDs, to reveal the impacts of the manufacturing process on their optical characteristics. Here, we fabricated and characterized high-efficiency GaN-based LEDs with integrated surface textures including micro-scale periodic hemispherical dimples and nano-scale random hexagonal pyramids on a 4 inch p-type Si substrate. The highly reflective Ag/TiW metallization scheme was performed to decrease downward-absorbing light. We demonstrated the influence of transferring LED epilayers from a sapphire substrate onto the Si substrate on the emission characteristics of the vertical LEDs. The removal of the sapphire substrate reduced the adverse impacts of the quantum-confined Stark effect (QCSE). The influence of integrated surface textures on the light extraction efficiency (LEE) of the vertical LEDs was studied. With the injection current of 350 mA, vertical LEDs with integrated surface textures demonstrated an excellent light output power of 468.9 mW with an emission peak wavelength of 456 nm. This work contributes to the integration of GaN-based vertical LEDs into Si-based integrated circuits.
DOI10.3390/cryst10070621
URL查看原文
收录类别SCI
语种英语
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/64746
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Y. Lei,H. Wan,B. Tang,S. Y. Lan,J. H. Miao,Z. H. Wan,Y. C. Liu and S. J. Zhou. Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate[J]. Crystals,2020,10(7):12.
APA Y. Lei,H. Wan,B. Tang,S. Y. Lan,J. H. Miao,Z. H. Wan,Y. C. Liu and S. J. Zhou.(2020).Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate.Crystals,10(7),12.
MLA Y. Lei,H. Wan,B. Tang,S. Y. Lan,J. H. Miao,Z. H. Wan,Y. C. Liu and S. J. Zhou."Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate".Crystals 10.7(2020):12.
条目包含的文件 下载所有文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
Lei-2020-Optical Cha(1890KB)期刊论文出版稿开放获取CC BY-NC-SA浏览 下载
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Y. Lei,H. Wan,B. Tang,S. Y. Lan,J. H. Miao,Z. H. Wan,Y. C. Liu and S. J. Zhou]的文章
百度学术
百度学术中相似的文章
[Y. Lei,H. Wan,B. Tang,S. Y. Lan,J. H. Miao,Z. H. Wan,Y. C. Liu and S. J. Zhou]的文章
必应学术
必应学术中相似的文章
[Y. Lei,H. Wan,B. Tang,S. Y. Lan,J. H. Miao,Z. H. Wan,Y. C. Liu and S. J. Zhou]的文章
相关权益政策
暂无数据
收藏/分享
文件名: Lei-2020-Optical Characterization of GaN-Based.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。