Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers

doi:10.1016/j.mseb.2020.114615

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	Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers
	D. N. Talwar, H. H. Lin and Z. C. Feng
	2020
发表期刊	Materials Science and Engineering B-Advanced Functional Solid-State Materials
ISSN	0921-5107
卷号	260 页码:10
摘要	Micro-Raman spectroscopy is employed to study the anisotropic optical phonons of Si-doped GaN/Sapphire epifilms grown by metal organic chemical vapor deposition method. In an undoped 3.6 mu m thick sample - our polarized Raman measurements in the backscattering geometry revealed major first order modes of GaN and sapphire. Careful analyses of the second-order Raman spectra using critical-point-phonons from a rigid-ion model fitted inelastic X-ray spectroscopy data with appropriate selection rules helped us attain expedient data for the lattice dynamics of GaN. In Si-doped films, a modified phonon confinement model is used for simulating Raman line shapes of Ehigh 2 phonons to monitor crystalline quality. While the optical phonons in lightly doped samples are coupled to electron plasma- at higher carrier concentration the over-damped A(1)(LO) mode vanished in the background. For each sample we assessed the transport parameters by simulating Raman profiles of A(1)(LO) line shape with contributions from plasmon-LO-phonon and Lorentzian shaped Eg sapphire mode. A realistic Green's function theory is adopted to study the vibrational modes of Si donors and Mg acceptors in GaN by including force constant changes estimated from lattice relaxations using first-principles bond-orbital model. Theoretical results of impurity-activated modes compared favorably well with the existing Raman scattering data.
DOI	10.1016/j.mseb.2020.114615
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收录类别	SCI ; EI
语种	英语
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64310
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	D. N. Talwar, H. H. Lin and Z. C. Feng. Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers[J]. Materials Science and Engineering B-Advanced Functional Solid-State Materials,2020,260:10.
APA	D. N. Talwar, H. H. Lin and Z. C. Feng.(2020).Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers.Materials Science and Engineering B-Advanced Functional Solid-State Materials,260,10.
MLA	D. N. Talwar, H. H. Lin and Z. C. Feng."Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers".Materials Science and Engineering B-Advanced Functional Solid-State Materials 260(2020):10.

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