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InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance 期刊论文
ACS PHOTONICS, 2018, 卷号: 5, 期号: 12, 页码: 4896-4902
Authors:  Yu, Qingnan;  Li, Xue;  Jia, Yan;  Lu, Wei;  Zheng, Ming;  Zhang, Xing;  Ning, Yongqiang;  Wu, Jian
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tunable semiconductor lasers  well-island composite quantum-confined structure  In GaAs/GaAs material  gain characteristics  flat top  indium-rich islands  
Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs-GaAs quantum well structure 期刊论文
Chinese Optics Letters, 2018, 卷号: 16, 期号: 1, 页码: 5
Authors:  Jia, Y.;  Yu, Q. N.;  Li, F.;  Wang, M. Q.;  Lu, W.;  Zhang, J.;  Zhang, X.;  Ning, Y. Q.;  Wu, J.
View  |  Adobe PDF(810Kb)  |  Favorite  |  View/Download:23/6  |  Submit date:2019/09/17
semiconductor-lasers  midinfrared laser  segregation  emission  Optics  
AlGaN photonics_recent advances in materials and ultraviolet devices 期刊论文
Advances in Optics and Photonics, 2018, 卷号: 10, 期号: 1, 页码: 43-110
Authors:  Li, D. B.;  Jiang, K.;  Sun, X. J.;  Guo, C. L.
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light-emitting-diodes  high-quality aln  temperature  stimulated-emission  2nd-order optical-response  atomic-layer epitaxy  vapor-phase epitaxy  z-scan measurement  p-type conduction  room-temperature  avalanche photodiodes  Optics  
Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure 期刊论文
Aip Advances, 2017, 卷号: 7, 期号: 8
Authors:  Yu, Q. N.;  Y. Jia;  W. Lu;  M. Q. Wang;  F. Li;  J. Zhang;  X. Zhang;  Y. Q. Ning and J. Wu
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Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD 期刊论文
Rsc Advances, 2016, 卷号: 6, 期号: 65
Authors:  Liu, J. X.;  H. W. Liang;  B. H. Li;  Y. Liu;  X. C. Xia;  H. L. Huang;  Q. A. Sandhu;  R. S. Shen;  Y. M. Luo and G. T. Du
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Preparation and employment of carbon nanodots to improve electron extraction capacity of polyethylenimine interfacial layer for polymer solar cells 期刊论文
Organic Electronics, 2016, 卷号: 33
Authors:  Zhang, X. Y.;  Z. Q. Li;  Z. H. Zhang;  C. Y. Liu;  J. F. Li;  W. B. Guo;  L. Shen and S. N. Qu
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Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots 期刊论文
Applied Physics Letters, 2002, 卷号: 81, 期号: 19, 页码: 3594-3596
Authors:  Li S. W.;  Koike K.
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Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons 期刊论文
Journal of Non-Crystalline Solids, 1997, 卷号: 212, 期号: 2—3, 页码: 192-197
Authors:  Sun J. M.;  Zhong G. Z.;  Fan X. W.;  Fu G. Z.;  Zheng C. W.
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