Optoelectronic Modulation of Undoped NiOx Films for Inverted Perovskite Solar Cells via Intrinsic Defect Regulation

doi:10.1021/acsaem.0c01330

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	Optoelectronic Modulation of Undoped NiOx Films for Inverted Perovskite Solar Cells via Intrinsic Defect Regulation
	M. L. Feng,M. Wang,H. P. Zhou,W. Li,X. H. Xie,S. P. Wang,Z. G. Zang and S. J. Chen
	2020
发表期刊	Acs Applied Energy Materials
ISSN	2574-0962
卷号	3 期号:10 页码:9732-9741
摘要	Ni vacancy (V-Ni) as an intrinsic defect plays an important role in the optical and electronic properties of NiOx films for inverted planar perovskite solar cell (PSC) applications. This work presents a facile method to fabricate highly dense and continuous NiOx films with excellent optical transmittance and electronic conductivity by pulsed laser deposition. By simply adjusting the preparation parameters, including oxygen partial pressure, postannealing temperature, and duration time, the well-regulated V-Ni defects contribute to the modified conductivity and optical transmittance of the NiOx films. The conductivity and optical transmittance of NiOx films are all dramatically enhanced with the increasing oxygen partial pressure. Specifically, the valence band level of NiOx is adjusted by the V-Ni defect densities to better match or align with that of the perovskite layer for faster hole extraction with lower energy losses. Density functional theory calculation displays that the Fermi energy level is shifted to a lower energy level due to the enhanced hole carrier concentration generated from the increased V-Ni. Benefiting from the excellent optical transmittance, electronic conductivity, and well-matched energy alignment, the inverted PSC with NiOx hole transport layer (HTL) exhibits the highest power conversion efficiency of 16.85% with high open-circuit voltage (1.14 V), short-circuit current density (20.49 mA/cm(2)), fill factor (0.72), and negligible current-voltage hysteresis effect. This work reveals that modulating the intrinsic defects of NiOx HTLs is an efficient way to achieve high performance of NiOx-based inverted PSCs.
DOI	10.1021/acsaem.0c01330
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收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64772
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	M. L. Feng,M. Wang,H. P. Zhou,W. Li,X. H. Xie,S. P. Wang,Z. G. Zang and S. J. Chen. Optoelectronic Modulation of Undoped NiOx Films for Inverted Perovskite Solar Cells via Intrinsic Defect Regulation[J]. Acs Applied Energy Materials,2020,3(10):9732-9741.
APA	M. L. Feng,M. Wang,H. P. Zhou,W. Li,X. H. Xie,S. P. Wang,Z. G. Zang and S. J. Chen.(2020).Optoelectronic Modulation of Undoped NiOx Films for Inverted Perovskite Solar Cells via Intrinsic Defect Regulation.Acs Applied Energy Materials,3(10),9732-9741.
MLA	M. L. Feng,M. Wang,H. P. Zhou,W. Li,X. H. Xie,S. P. Wang,Z. G. Zang and S. J. Chen."Optoelectronic Modulation of Undoped NiOx Films for Inverted Perovskite Solar Cells via Intrinsic Defect Regulation".Acs Applied Energy Materials 3.10(2020):9732-9741.

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