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Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD 期刊论文
Rsc Advances, 2016, 卷号: 6, 期号: 65
Authors:  Liu, J. X.;  H. W. Liang;  B. H. Li;  Y. Liu;  X. C. Xia;  H. L. Huang;  Q. A. Sandhu;  R. S. Shen;  Y. M. Luo and G. T. Du
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