Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm

doi:10.3390/cryst12121812

CIOMP OpenIR

	Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm
	C. Y. Zhang; K. Jiang; X. J. Sun and D. B. Li
	2022
发表期刊	Crystals
卷号	12 期号:12 页码:23
摘要	AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs), especially with a wavelength below 250 nm, have great application potential in the fields of sterilization and disinfection, gas sensing, and other aspects. However, with the decrease of emission wavelength, performance collapse occurs and the external quantum efficiencies (EQE) of sub-250 nm LEDs are usually below 1% for a long time. Low efficiencies are resulted from problem accumulation of all aspects, including n/p-type doping and contacts, carrier confinements and transports, light extraction, etc. To achieve high EQE of sub-250 nm LEDs, problems and solutions need to be discussed. In this paper, the research progress, development bottlenecks, and corresponding solutions of sub-250 nm LEDs are summarized and discussed in detail.
DOI	10.3390/cryst12121812
URL	查看原文
收录类别	sci
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67026
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C. Y. Zhang,K. Jiang,X. J. Sun and D. B. Li. Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm[J]. Crystals,2022,12(12):23.
APA	C. Y. Zhang,K. Jiang,&X. J. Sun and D. B. Li.(2022).Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm.Crystals,12(12),23.
MLA	C. Y. Zhang,et al."Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm".Crystals 12.12(2022):23.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Recent Progress on A（4975KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载