InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance

doi:10.1021/acsphotonics.8b01048

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	InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance
	Yu, Qingnan 1; Li, Xue 2; Jia, Yan 1; Lu, Wei 1; Zheng, Ming 1; Zhang, Xing2 ; Ning, Yongqiang2 ; Wu, Jian 1
	2018-12-01
发表期刊	ACS PHOTONICS
ISSN	2330-4022
卷号	5 期号:12 页码:4896-4902
通讯作者	Wu, Jian(jwu2@buaa.edu.cn)
摘要	In the development of semiconductor lasers, it has been a dream all along to simultaneously obtain extremely wide and uniform gain distribution, because such a gain configuration can greatly enhance semiconductor laser performance. Hence, it has also been a huge challenge to realize this dream so far. In this paper, we are reporting a special InGaAs-based well island composite quantum-confined structure, with which the best results to date in achieving both superwide and very uniform gain and power distributions are obtained. The spectral flatness of the output power can reach 0.1 dB, and the gain bandwidth is broadened to 6-fold broader than the fwhm (full width at half-maximum) of the standard gain spectrum from a classic InGaAs quantum well under the same carrier density. The formation of the well-island composite quantum-confined structure is associated with the indium-rich island effect in the material growth. The great significance of this work lies in that it is making the above dream come true, since it not only can tremendously increase the spectral tuning range of an InGaAs-based semiconductor laser but also exhibits a great potential on achieving uniform output power over the full spectral tuning range of the laser.
关键词	tunable semiconductor lasers well-island composite quantum-confined structure In GaAs/GaAs material gain characteristics flat top indium-rich islands
DOI	10.1021/acsphotonics.8b01048
关键词[WOS]	EXTERNAL-CAVITY ; LIGHT ; GROWTH ; DIODE ; SI
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61376067] ; National Natural Science Foundation of China[61474118]
项目资助者	National Natural Science Foundation of China
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Optics ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Optics ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000454463000024
出版者	AMER CHEMICAL SOC
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60107
专题	中国科学院长春光学精密机械与物理研究所
通讯作者	Wu, Jian
作者单位	1.Beihang Univ, Dept Appl Phys, Beijing 100191, Peoples R China 2.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China
推荐引用方式 GB/T 7714	Yu, Qingnan,Li, Xue,Jia, Yan,et al. InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance[J]. ACS PHOTONICS,2018,5(12):4896-4902.
APA	Yu, Qingnan.,Li, Xue.,Jia, Yan.,Lu, Wei.,Zheng, Ming.,...&Wu, Jian.(2018).InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance.ACS PHOTONICS,5(12),4896-4902.
MLA	Yu, Qingnan,et al."InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance".ACS PHOTONICS 5.12(2018):4896-4902.

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