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InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance 期刊论文
ACS PHOTONICS, 2018, 卷号: 5, 期号: 12, 页码: 4896-4902
Authors:  Yu, Qingnan;  Li, Xue;  Jia, Yan;  Lu, Wei;  Zheng, Ming;  Zhang, Xing;  Ning, Yongqiang;  Wu, Jian
Adobe PDF(591Kb)  |  Favorite  |  View/Download:113/19  |  Submit date:2019/05/22
tunable semiconductor lasers  well-island composite quantum-confined structure  In GaAs/GaAs material  gain characteristics  flat top  indium-rich islands