AlGaN photonics_recent advances in materials and ultraviolet devices
Li, D. B.; Jiang, K.; Sun, X. J.; Guo, C. L.
Source PublicationAdvances in Optics and Photonics
AbstractAlGaN-based materials own direct transition energy bands and wide bandgap and thus can be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades, AlGaN-based materials and devices experienced rapid development. Deep ultraviolet AlGaN-based light-emitting diodes (LEDs) with improved efficiency of 20.3% (at 275 nm) have been produced. An electron beam (EB)-pumped AlGaN-based UV light source at 238 nm, output power of 100 mW, and power conversion efficiency (PCE) of 40% has also been fabricated. UV stimulated emission from AlGaN multiple-quantum- wells laser diodes (LDs) using electrical pumping at room temperature has also been achieved at a wavelength of 336 nm. Compared with GaN-based blue and green LEDs and LDs, the efficiency of AlGaN-based UV LEDs and LDs is lower. Further optimization and improvements in both structure and fabrication are required to realize high-performance devices. In AlGaN-based UV photodetectors (PDs), gain as high as 104 orders of magnitude has been reported using the separated absorption and multiplication region avalanche photodiode structure but is still far from detecting the weak signal, and thus UV single-photon detectors with high detectivity is challenging. Recently, there has been extensive work in the nonlinear optical properties of AlGaN and AlGaN-based passive devices, such as waveguides and resonators. However, how to minimize the scattering and defect-related absorption needs to be further studied. In this review, first, approaches used to grow an AlGaN epilayer and p-type doping are introduced. Second, progress in AlGaN-based UV LEDs, EB-pumped light sources, LDs, PDs, passive devices, and the nonlinear optical properties are presented. Finally, an overview of potential future trends in AlGaN-based materials and UV devices is given. (c) 2018 Optical Society of America
Keywordlight-emitting-diodes high-quality aln temperature stimulated-emission 2nd-order optical-response atomic-layer epitaxy vapor-phase epitaxy z-scan measurement p-type conduction room-temperature avalanche photodiodes Optics
Indexed BySCI ; EI
Citation statistics
Cited Times:72[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Recommended Citation
GB/T 7714
Li, D. B.,Jiang, K.,Sun, X. J.,et al. AlGaN photonics_recent advances in materials and ultraviolet devices[J]. Advances in Optics and Photonics,2018,10(1):43-110.
APA Li, D. B.,Jiang, K.,Sun, X. J.,&Guo, C. L..(2018).AlGaN photonics_recent advances in materials and ultraviolet devices.Advances in Optics and Photonics,10(1),43-110.
MLA Li, D. B.,et al."AlGaN photonics_recent advances in materials and ultraviolet devices".Advances in Optics and Photonics 10.1(2018):43-110.
Files in This Item: Download All
File Name/Size DocType Version Access License
AlGaN photonics_rece(6543KB)期刊论文出版稿开放获取CC BY-NC-SAView Download
Related Services
Recommend this item
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li, D. B.]'s Articles
[Jiang, K.]'s Articles
[Sun, X. J.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li, D. B.]'s Articles
[Jiang, K.]'s Articles
[Sun, X. J.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li, D. B.]'s Articles
[Jiang, K.]'s Articles
[Sun, X. J.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: AlGaN photonics_recent advances in materials a.pdf
Format: Adobe PDF
All comments (0)
No comment.

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.