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Passive Q-switched Solid-state Nd: YAG Laser Based on Ultrathin MoS2 Saturable Absorber 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2021, 卷号: 42, 期号: 5, 页码: 668-673
Authors:  X.-P. Fu;  X.-H. Fu;  C. Yao;  F. Yang;  J. Zhang;  H.-Y. Peng;  L. Qin and Y.-Q. Ning
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Optoelectronic Performance of 2D WSe2 Field Effect Transistor 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2021, 卷号: 42, 期号: 2, 页码: 257-263
Authors:  F.-L. Xia;  K.-X. Shi;  D.-X. Zhao;  Y.-P. Wang;  Y. Fan and J.-H. Li
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核电池概述及展望 期刊论文
原子核物理评论, 2020, 卷号: 37, 期号: 04, 页码: 875-892
Authors:  李潇祎;  陆景彬;  郑人洲;  许旭;  王宇;  刘玉敏;  何瑞;  梁磊
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核电池  放射源  辐射伏特效应  自吸收  辐射损伤  电学性能  
AlGaN基宽禁带半导体光电材料与器件 期刊论文
人工晶体学报, 2020, 卷号: 49, 期号: 11, 页码: 2046-2067
Authors:  贲建伟;  孙晓娟;  蒋科;  陈洋;  石芝铭;  臧行;  张山丽;  黎大兵;  吕威
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AlGaN基材料  外延生长  掺杂  紫外发光器件  紫外探测  
Research Progress on Near-Infrared High-Power Laser Damage of Liquid Crystal Optical Devices 期刊论文
Zhongguo Jiguang/Chinese Journal of Lasers, 2020, 卷号: 47, 期号: 1, 页码: 14
Authors:  X. Liu,L. Peng,Y. Zhao,X. Wang,D. Li and J. Shao
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Ion implantation isolation based micro-light-emitting diode device array properties 期刊论文
Acta Physica Sinica, 2020, 卷号: 69, 期号: 2, 页码: 7
Authors:  C. H. Gao,F. Xu,L. Zhang,D. S. Zhao,X. Wei,L. J. Che,Y. Z. Zhuang,B. S. Zhang and J. Zhang
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Fast and High Quality Composite Processing Method for Silicon Carbide Wafers 期刊论文
Guangxue Xuebao/Acta Optica Sinica, 2020, 卷号: 40, 期号: 13
Authors:  C. Yang,F. Li,T. Ren,Y. Wei and Y. Bai
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大功率半导体激光器抗腔面灾变性光学损伤技术综述 期刊论文
半导体光电, 2020, 卷号: 41, 期号: 05, 页码: 618-626
Authors:  宋悦;  宁永强;  秦莉;  陈泳屹;  张金龙;  张俊;  王立军
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大功率半导体激光器  腔面灾变性光学损伤  输出功率  可靠性  
CH_3NH_3PbCl_3/ZnO紫外探测器的设计制备及其界面效应的研究 学位论文
, 中国科学院大学(中国科学院长春光学精密机械与物理研究所): 中国科学院大学(中国科学院长春光学精密机械与物理研究所), 2019
Authors:  杨佳霖
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ZnO  钙钛矿  紫外探测器  界面效应  载流子动力学  
Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
Authors:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
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Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide