Ion implantation isolation based micro-light-emitting diode device array properties

doi:10.7498/aps.69.20191418

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	Ion implantation isolation based micro-light-emitting diode device array properties
	C. H. Gao,F. Xu,L. Zhang,D. S. Zhao,X. Wei,L. J. Che,Y. Z. Zhuang,B. S. Zhang and J. Zhang
	2020
发表期刊	Acta Physica Sinica
ISSN	1000-3290
卷号	69 期号:2 页码:7
摘要	Compared with conventional light-emitting diode (LED), micro-LED has excellent photo-electric properties such as high current density, light output power density, light response frequency. It has widespread application prospects in the field of light display, optical tweezers, and visible light communication. However, dry etching inevitably leads the sidewall to be damaged, which results in the degradation of device properties. In this letter, a micro-LED array device based on F ions implantation isolation technology is presented to avoid damaging the sidewall. We systemically investigate the influence of fluorine ion implantation energy and light-emitting apertures on the photoelectric properties of the micro-LED array device by testing the current-voltage characteristic and light output power. The investigation results show that comparing with F ion 50 keV single implantation device, the reverse leakage of 50/100 keV double implantation device decreases by 8.4 times and the optical output density increases by 1.3 times. When the light-emitting apertures are different (6, 8, 10 mu m respectively), the reverse leakage current remains constant, and the forward operating voltage decreasesfrom 3.3 V to 3.1 V and to 2.9 V with the increase of the aperture. Besides, the available area ratio, i.e. the ratio of actual light-emitting area to device area of single micro-LED with different light-emitting apertures are 85%, 87%, and 92%, respectively. The electrical isolation of the micro-LED array is realized by ion implantation isolation technology, and the micro-LED has some advantages over the conventional mesa etching micro-LED device, such as low reverse leakage current density, high optical output power density, and high effective light-emitting area ratio.
DOI	10.7498/aps.69.20191418
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收录类别	SCI
语种	中文
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64632
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C. H. Gao,F. Xu,L. Zhang,D. S. Zhao,X. Wei,L. J. Che,Y. Z. Zhuang,B. S. Zhang and J. Zhang. Ion implantation isolation based micro-light-emitting diode device array properties[J]. Acta Physica Sinica,2020,69(2):7.
APA	C. H. Gao,F. Xu,L. Zhang,D. S. Zhao,X. Wei,L. J. Che,Y. Z. Zhuang,B. S. Zhang and J. Zhang.(2020).Ion implantation isolation based micro-light-emitting diode device array properties.Acta Physica Sinica,69(2),7.
MLA	C. H. Gao,F. Xu,L. Zhang,D. S. Zhao,X. Wei,L. J. Che,Y. Z. Zhuang,B. S. Zhang and J. Zhang."Ion implantation isolation based micro-light-emitting diode device array properties".Acta Physica Sinica 69.2(2020):7.

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