Fast and High Quality Composite Processing Method for Silicon Carbide Wafers

doi:10.3788/AOS202040.1322001

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	Fast and High Quality Composite Processing Method for Silicon Carbide Wafers
	C. Yang,F. Li,T. Ren,Y. Wei and Y. Bai
	2020
发表期刊	Guangxue Xuebao/Acta Optica Sinica
ISSN	2532239
卷号	40 期号:13
摘要	In order to improve the polishing efficiency and surface quality of single-crystal silicon carbide (SiC) materials, we propose a new method based on traditional polishing combined with magnetorheological finishing (MRF), which is used for the practical fabrication of a single-crystal SiC wafer with a diameter of 100 mm. First, the surface roughness of the single-crystal SiC wafer is rapidly processed to about 0.6 nm by the ring polishing method. Then, the wafer uniform polishing for 35 min with MRF is adopted to improve the defects on the surface of SiC wafer and eliminate the subsurface damage of the wafer via the preparation of a special magnetorheological polishing fluid. Finally, the ring polishing is adopted to finely polish the SiC wafer with the nano-diamond polishing fluid and a high surface quality single-crystal SiC wafer with roughness of 0.327 nm is obtained. The method proposed here reduces the fabrication time by about 7 h and is helpful to improve the fabrication efficiency, precision and surface quality of SiC wafers. 2020, Chinese Lasers Press. All right reserved.
DOI	10.3788/AOS202040.1322001
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收录类别	EI
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64520
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C. Yang,F. Li,T. Ren,Y. Wei and Y. Bai. Fast and High Quality Composite Processing Method for Silicon Carbide Wafers[J]. Guangxue Xuebao/Acta Optica Sinica,2020,40(13).
APA	C. Yang,F. Li,T. Ren,Y. Wei and Y. Bai.(2020).Fast and High Quality Composite Processing Method for Silicon Carbide Wafers.Guangxue Xuebao/Acta Optica Sinica,40(13).
MLA	C. Yang,F. Li,T. Ren,Y. Wei and Y. Bai."Fast and High Quality Composite Processing Method for Silicon Carbide Wafers".Guangxue Xuebao/Acta Optica Sinica 40.13(2020).

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