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Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 857, 期号: 13
作者:  J. H. Yin;  D. H. Chen;  H. Yang;  Y. Liu;  D. N. Talwar;  T. L. He;  I. T. Ferguson;  K. Y. He;  L. Y. Wan and Z. C. Feng
浏览  |  Adobe PDF(5258Kb)  |  收藏  |  浏览/下载：128/57  |  提交时间：2022/06/13
A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
作者:  Y. Chen;  Y. Wu;  J. Ben;  K. Jiang;  Y. Jia;  S. Zhang;  H. Zang;  Z. Shi;  B. Duan;  X. Sun and D. Li
浏览  |  Adobe PDF(8619Kb)  |  收藏  |  浏览/下载：116/39  |  提交时间：2022/06/13
AlGaN-based UV-C distributed Bragg reflector with a -cavity designed for an external cavity structure electron-beam-pumped VCSEL 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 820
作者:  Y. R. Chen, Z. W. Zhang, G. Q. Miao, H. Jiang, Z. M. Li and H. Song
浏览  |  Adobe PDF(2944Kb)  |  收藏  |  浏览/下载：105/33  |  提交时间：2021/07/06
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
浏览  |  Adobe PDF(2230Kb)  |  收藏  |  浏览/下载：146/61  |  提交时间：2021/07/06
Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 848, 页码: 10
作者:  Y. Liu,T. Y. He,D. H. Chen,H. Yang,I. T. Ferguson,D. Huang and Z. C. Feng
浏览  |  Adobe PDF(2392Kb)  |  收藏  |  浏览/下载：80/13  |  提交时间：2021/07/06
Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
浏览  |  Adobe PDF(1409Kb)  |  收藏  |  浏览/下载：176/51  |  提交时间：2020/08/24
Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
浏览  |  Adobe PDF(2881Kb)  |  收藏  |  浏览/下载：162/62  |  提交时间：2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
浏览  |  Adobe PDF(1681Kb)  |  收藏  |  浏览/下载：470/134  |  提交时间：2019/09/17
Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering  
Chemical states of gold doped in ZnO films and its effect on electrical and optical properties 期刊论文
Journal of Alloys and Compounds, 2014, 期号: 585, 页码: 479-484
作者:  Xu Y.;  Yao B.;  Li Y. F.;  Ding Z. H.;  Li J. C.;  Wang H. Z.;  Zhang Z. Z.;  Zhang L. G.;  Zhao H. F.;  Shen D. Z.
浏览  |  Adobe PDF(1625Kb)  |  收藏  |  浏览/下载：225/40  |  提交时间：2015/04/24