Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment

doi:10.1016/j.jallcom.2019.04.227

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	Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment
	X.K.Liu; K.L.Li; X.J.Sun; Z.M.Shi; Z.H.Huang; Z.W.Li; L.Min
	2019
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	793 页码:599-603
摘要	Interface engineering plays a decisive role in the two-dimensional material/high-kappa oxide heterojunction-based devices. In this work, the effects of NH3 plasma interface treatment on the energy band alignment at multilayer MoS2/Al2O3 heterostructures were explored using x-ray photoelectron spectroscopy. A type-I band alignment was formed with valence band offset (VBO) and conduction band offset (CBO) about 3.67 eV and 2.33 eV, respectively. Significantly, the CBO was enlarged by about 0.45 eV after the plasma treatment, which was mainly attributed to the increased separation between the Al 2p core-level energy and valence band maximum. This interesting finding provides a significant guidance for the band adjustment at the interface and further applications of multilayer MoS2 in electronic devices. (C) 2019 Elsevier B.V. All rights reserved.
关键词	Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering
DOI	10.1016/j.jallcom.2019.04.227
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63177
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X.K.Liu,K.L.Li,X.J.Sun,et al. Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment[J]. Journal of Alloys and Compounds,2019,793:599-603.
APA	X.K.Liu.,K.L.Li.,X.J.Sun.,Z.M.Shi.,Z.H.Huang.,...&L.Min.(2019).Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment.Journal of Alloys and Compounds,793,599-603.
MLA	X.K.Liu,et al."Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment".Journal of Alloys and Compounds 793(2019):599-603.

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