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Destroying the symmetric structure to promote phase transition: Improving the SERS performance and catalytic activity of MoS2 nanoflowers 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 886
作者:  R. Su;  Y. Quan;  S. Yang;  M. Hu;  J. Yang and M. Gao
浏览  |  Adobe PDF(9535Kb)  |  收藏  |  浏览/下载：117/23  |  提交时间：2022/06/13
A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
作者:  Y. Chen;  Y. Wu;  J. Ben;  K. Jiang;  Y. Jia;  S. Zhang;  H. Zang;  Z. Shi;  B. Duan;  X. Sun and D. Li
浏览  |  Adobe PDF(8619Kb)  |  收藏  |  浏览/下载：154/57  |  提交时间：2022/06/13
Impact of Al2O3 stress liner on two-dimensional SnS2 nanosheet for photodetector application 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 830, 页码: 7
作者:  X. K. Liu,X. H. Deng,X. H. Li,H. C. Chiu,Y. X. Chen,V. D. Botcha,M. Wang,W. J. Yu and C. H. Lin
浏览  |  Adobe PDF(1538Kb)  |  收藏  |  浏览/下载：124/47  |  提交时间：2021/07/06
Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
浏览  |  Adobe PDF(1409Kb)  |  收藏  |  浏览/下载：194/56  |  提交时间：2020/08/24
Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
浏览  |  Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：177/52  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
浏览  |  Adobe PDF(2881Kb)  |  收藏  |  浏览/下载：184/68  |  提交时间：2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 797, 页码: 262-268
作者:  Y.X.Chen;  K.L.Li;  Z.W.Li;  S.Q.Hu;  X.J.Sun;  Z.M.Shi;  X.K.Liu
浏览  |  Adobe PDF(2209Kb)  |  收藏  |  浏览/下载：194/65  |  提交时间：2020/08/24
Boron nitride,Thermal conductivity,Raman spectroscopy,graphene,conductivity,deposition,nanosheets  
Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD 期刊论文
Journal of Alloys and Compounds, 2008, 卷号: 458, 期号: 1—2, 页码: 363-365
作者:  Zhang T.;  Miao G. Q.;  Jin Y. X.;  Jiang H.;  Li Z. M.;  Song H.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：630/162  |  提交时间：2012/10/21