Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer | |
Y.X.Chen; K.L.Li; Z.W.Li; S.Q.Hu; X.J.Sun; Z.M.Shi; X.K.Liu | |
2019 | |
发表期刊 | Journal of Alloys and Compounds
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ISSN | 0925-8388 |
卷号 | 797页码:262-268 |
摘要 | Atomically thin boron nitride (BN) film has attracted increasing attention among two-dimensional materials for the potential application in electronics devices. The thermal properties of few-layer BN nanosheets (similar to 2.27 nm) on SiO2/Si substrates have been investigated without and with high-k Al2O3 capping layer, using the temperature-dependent and polarized-laser power-dependent Raman spectroscopy measurements. Due to the effect of Al2O3 capping layer, Raman spectrum illustrates the blue-shift of frequency from 1364.9 cm(-1) to 1367.9 cm(-1), and the first order temperature coefficient for E-2g mode of BN layers increases from -0.02243 cm(-1)/K to -0.06544 cm(-1)/K. Furthermore, the room-temperature thermal conductivity of BN with Al2O3 capping layer is found to be 332.57 W/mK, which is much larger than that of BN without Al2O3 capping layer (-94.51 W/mK). The enhancement is attributed to the interface charges and compressive stress at the interface between BN and Al2O3 capping layer, which has been clarified by the first principle calculations. This work is aimed at expanding the applications of BN materials and improving the performances of BN-based devices in thermal properties. (C) 2019 Elsevier B.V. All rights reserved. |
关键词 | Boron nitride,Thermal conductivity,Raman spectroscopy,graphene,conductivity,deposition,nanosheets |
DOI | 10.1016/j.jallcom.2019.05.115 |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/63439 |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | Y.X.Chen,K.L.Li,Z.W.Li,et al. Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer[J]. Journal of Alloys and Compounds,2019,797:262-268. |
APA | Y.X.Chen.,K.L.Li.,Z.W.Li.,S.Q.Hu.,X.J.Sun.,...&X.K.Liu.(2019).Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer.Journal of Alloys and Compounds,797,262-268. |
MLA | Y.X.Chen,et al."Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer".Journal of Alloys and Compounds 797(2019):262-268. |
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