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Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
浏览  |  Adobe PDF(2230Kb)  |  收藏  |  浏览/下载：170/75  |  提交时间：2021/07/06
Performance improvement of amorphous Ga 2 O 3 ultraviolet photodetector by annealing under oxygen atmosphere 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 840, 页码: 7
作者:  C. Q. Zhou,K. W. Liu,X. Chen,J. H. Feng,J. L. Yang,Z. Z. Zhang,L. Liu,Y. Xia and D. Z. Shen
浏览  |  Adobe PDF(1727Kb)  |  收藏  |  浏览/下载：156/59  |  提交时间：2021/07/06
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
浏览  |  Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：178/52  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
浏览  |  Adobe PDF(2881Kb)  |  收藏  |  浏览/下载：186/68  |  提交时间：2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method 期刊论文
Journal of Alloys and Compounds, 2010, 卷号: 506, 期号: 2, 页码: 530-532
作者:  Liu X.;  Jiang H.;  Miao G. Q.;  Song H.;  Cao L. Z.;  Li Z. M.;  Li D. B.
Adobe PDF(257Kb)  |  收藏  |  浏览/下载：417/33  |  提交时间：2012/10/21
Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique 期刊论文
Journal of Alloys and Compounds, 2009, 卷号: 472, 期号: 1—2, 页码: 587-590
作者:  Zhang T. M.;  Miao G. Q.;  Jin Y. X.;  Yu S. Z.;  Jiang H.;  Li Z. M.;  Song H.
Adobe PDF(619Kb)  |  收藏  |  浏览/下载：547/96  |  提交时间：2012/10/21
Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD 期刊论文
Journal of Alloys and Compounds, 2008, 卷号: 466, 期号: 1—2, 页码: 507-511
作者:  Yu S. Z.;  Miao G. Q.;  Xie J. C.;  Jin Y. X.;  Zhang T. M.;  Song H.;  Jiang H.;  Li Z. M.
Adobe PDF(593Kb)  |  收藏  |  浏览/下载：761/147  |  提交时间：2012/10/21
Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD 期刊论文
Journal of Alloys and Compounds, 2008, 卷号: 458, 期号: 1—2, 页码: 363-365
作者:  Zhang T.;  Miao G. Q.;  Jin Y. X.;  Jiang H.;  Li Z. M.;  Song H.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：642/163  |  提交时间：2012/10/21