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Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
浏览  |  Adobe PDF(2230Kb)  |  收藏  |  浏览/下载：165/72  |  提交时间：2021/07/06
Impact of Al2O3 stress liner on two-dimensional SnS2 nanosheet for photodetector application 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 830, 页码: 7
作者:  X. K. Liu,X. H. Deng,X. H. Li,H. C. Chiu,Y. X. Chen,V. D. Botcha,M. Wang,W. J. Yu and C. H. Lin
浏览  |  Adobe PDF(1538Kb)  |  收藏  |  浏览/下载：121/46  |  提交时间：2021/07/06
Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 848, 页码: 10
作者:  Y. Liu,T. Y. He,D. H. Chen,H. Yang,I. T. Ferguson,D. Huang and Z. C. Feng
浏览  |  Adobe PDF(2392Kb)  |  收藏  |  浏览/下载：93/15  |  提交时间：2021/07/06
Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
浏览  |  Adobe PDF(1409Kb)  |  收藏  |  浏览/下载：191/55  |  提交时间：2020/08/24
Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Theoretical investigation of strain-engineered WSe2 monolayers as anode material for Li-ion batteries 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 370-375
作者:  J.Rehman;  R.Ali;  N.Ahmad;  X.D.Lv;  C.L.Guo
浏览  |  Adobe PDF(1616Kb)  |  收藏  |  浏览/下载：215/70  |  提交时间：2020/08/24
2D materials,LIBs,Adsorption,Diffusion,Tensile strain,transition-metal dichalcogenides,electrode materials,crystalline wse2,mono layers,lithium,energy,adsorption,chemistry,graphene,storage,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
浏览  |  Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：174/51  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
浏览  |  Adobe PDF(2881Kb)  |  收藏  |  浏览/下载：181/67  |  提交时间：2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 797, 页码: 262-268
作者:  Y.X.Chen;  K.L.Li;  Z.W.Li;  S.Q.Hu;  X.J.Sun;  Z.M.Shi;  X.K.Liu
Adobe PDF(2209Kb)  |  收藏  |  浏览/下载：187/64  |  提交时间：2020/08/24
Boron nitride,Thermal conductivity,Raman spectroscopy,graphene,conductivity,deposition,nanosheets  
Effects of Fe, Co and Ni elements on the ductility of TiAl alloy 期刊论文
Journal of Alloys and Compounds, 2014, 期号: 617, 页码: 302-305
作者:  Shu S. L.;  Qiu F.;  Tong C. Z.;  Shan X. N.;  Jiang Q. C.
Adobe PDF(1263Kb)  |  收藏  |  浏览/下载：253/24  |  提交时间：2015/04/24