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Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping 期刊论文
Physical Chemistry Chemical Physics, 2022, 卷号: 24, 期号: 9, 页码: 5529-5538
作者:  S. Q. Lu;  T. C. Zheng;  K. Jiang;  X. J. Sun;  D. B. Li;  H. Y. Chen;  J. C. Li;  Y. H. Zhou;  D. J. Cai;  S. P. Li;  W. Lin and J. Y. Kang
浏览  |  Adobe PDF(4832Kb)  |  收藏  |  浏览/下载：140/43  |  提交时间：2023/06/14
Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors 期刊论文
Progress in Quantum Electronics, 2022, 卷号: 83, 页码: 29
作者:  J. L. Yang;  K. W. Liu;  X. Chen and D. Z. Shen
Adobe PDF(4327Kb)  |  收藏  |  浏览/下载：135/71  |  提交时间：2023/06/14
Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 857, 期号: 13
作者:  J. H. Yin;  D. H. Chen;  H. Yang;  Y. Liu;  D. N. Talwar;  T. L. He;  I. T. Ferguson;  K. Y. He;  L. Y. Wan and Z. C. Feng
Adobe PDF(5258Kb)  |  收藏  |  浏览/下载：145/60  |  提交时间：2022/06/13
Structural and compositional analysis of (InGa) (AsSb)/GaAs/GaP Stranski-Krastanov quantum dots 期刊论文
Light-Science & Applications, 2021, 卷号: 10, 期号: 1, 页码: 13
作者:  R. S. R. Gajjela;  A. L. Hendriks;  J. O. Douglas;  E. M. Sala;  P. Steindl;  P. Klenovsky;  P. A. J. Bagot;  M. P. Moody;  D. Bimberg and P. M. Koenraad
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Origination and evolution of point defects in AlN film annealed at high temperature 期刊论文
Journal of Luminescence, 2021, 卷号: 235
作者:  C. Kai;  H. Zang;  J. Ben;  K. Jiang;  Z. Shi;  Y. Jia;  X. Cao;  W. Lu;  X. Sun and D. Li
浏览  |  Adobe PDF(4451Kb)  |  收藏  |  浏览/下载：139/55  |  提交时间：2022/06/13
Mechanism of a-AlN Surface Morphology Evolution by High Temperature Annealing 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2021, 卷号: 42, 期号: 6, 页码: 810-817
作者:  J.-E. Sui;  J.-W. Ben;  H. Zang;  K. Jiang;  S.-L. Zhang;  B.-L. Guo;  Y. Chen;  Z.-M. Shi;  Y.-P. Jia;  D.-B. Li and X.-J. Sun
浏览  |  Adobe PDF(3595Kb)  |  收藏  |  浏览/下载：196/82  |  提交时间：2022/06/13
The effect of dislocation-related V-shaped pits preparation on the strain of AlN templates 期刊论文
Thin Solid Films, 2021, 卷号: 730
作者:  X. Zhou;  Y. Chen;  Z. Zhang;  G. Miao;  H. Jiang;  Z. Li and H. Song
浏览  |  Adobe PDF(8607Kb)  |  收藏  |  浏览/下载：120/35  |  提交时间：2022/06/13
Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers 期刊论文
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2020, 卷号: 260, 页码: 10
作者:  D. N. Talwar, H. H. Lin and Z. C. Feng
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Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN 期刊论文
Applied Surface Science, 2020, 卷号: 520, 页码: 9
作者:  K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li
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Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers 期刊论文
Materials Chemistry and Physics, 2020, 卷号: 252, 页码: 16
作者:  D. N. Talwar,H. H. Lin and Z. C. Feng
浏览  |  Adobe PDF(10862Kb)  |  收藏  |  浏览/下载：120/33  |  提交时间：2021/07/06