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On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001) 期刊论文
New Journal of Physics, 2021, 卷号: 23, 期号: 10, 页码: 16
Authors:  P. Steindl;  E. M. Sala;  B. Alen;  D. Bimberg and P. Klenovsky
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Structural and compositional analysis of (InGa) (AsSb)/GaAs/GaP Stranski-Krastanov quantum dots 期刊论文
Light-Science & Applications, 2021, 卷号: 10, 期号: 1, 页码: 13
Authors:  R. S. R. Gajjela;  A. L. Hendriks;  J. O. Douglas;  E. M. Sala;  P. Steindl;  P. Klenovsky;  P. A. J. Bagot;  M. P. Moody;  D. Bimberg and P. M. Koenraad
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MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications 期刊论文
Physica Status Solidi B-Basic Solid State Physics, 2018, 卷号: 255, 期号: 12, 页码: 7
Authors:  Sala, E. M.;  Arikan, I. F.;  Bonato, L.;  Bertram, F.;  Veit, P.;  Christen, J.;  Strittmatter, A.;  Bimberg, D.
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AlP barrier  GaP  InGaSb  MOVPE growth  nanoscale memory  quantum dots  hole localization  ohmic contacts  luminescence  resistance  Physics