The effect of dislocation-related V-shaped pits preparation on the strain of AlN templates

doi:10.1016/j.tsf.2021.138706

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	The effect of dislocation-related V-shaped pits preparation on the strain of AlN templates
	X. Zhou; Y. Chen; Z. Zhang; G. Miao; H. Jiang; Z. Li and H. Song
	2021
发表期刊	Thin Solid Films
ISSN	406090
卷号	730
摘要	Herein, the dislocation defects of an aluminum nitride (AlN) template heteroepitaxially grown by metal-organic chemical vapor deposition are exposed by phosphoric acid etching. The effect of dislocation-related V-shaped pits preparation on the strain of AlN epilayer is intensively studied. The results show that the dislocation defect etching leads to a strain gradient elongating along the growth direction of AlN and alleviates its initial tensile strain. Through a secondary epitaxy on the dislocation-etched AlN, it further reveals that the strain evolves into compressive strain state accompanied by surface cracking inhibition. It provides an effective way of stress regulation by dislocation-related etching and can be developed as a mask-free lateral epitaxial growth technique for high-performance AlN template preparation. 2021
DOI	10.1016/j.tsf.2021.138706
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收录类别	SCI ; EI
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65192
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X. Zhou,Y. Chen,Z. Zhang,et al. The effect of dislocation-related V-shaped pits preparation on the strain of AlN templates[J]. Thin Solid Films,2021,730.
APA	X. Zhou,Y. Chen,Z. Zhang,G. Miao,H. Jiang,&Z. Li and H. Song.(2021).The effect of dislocation-related V-shaped pits preparation on the strain of AlN templates.Thin Solid Films,730.
MLA	X. Zhou,et al."The effect of dislocation-related V-shaped pits preparation on the strain of AlN templates".Thin Solid Films 730(2021).

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