Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

doi:10.1016/j.pquantelec.2022.100397

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	Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
	J. L. Yang; K. W. Liu; X. Chen and D. Z. Shen
	2022
发表期刊	Progress in Quantum Electronics
ISSN	0079-6727
卷号	83 页码:29
摘要	Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawidebandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 eV of GaN, such as aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3), and diamond, have attracted increasing attention due to their advantages, including high breakdown field, high stability, and high radiation resistance. In this review, recent research pertaining to UWBG semiconductors in optoelectronics and microelectronics is introduced. Moreover, the challenges and opportunities of UWBG semiconductors are deliberated. It is expected that this review will provide inspiration and insights for further related research.
DOI	10.1016/j.pquantelec.2022.100397
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收录类别	sci ; ei
语种	英语
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67024
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J. L. Yang,K. W. Liu,X. Chen and D. Z. Shen. Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors[J]. Progress in Quantum Electronics,2022,83:29.
APA	J. L. Yang,K. W. Liu,&X. Chen and D. Z. Shen.(2022).Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors.Progress in Quantum Electronics,83,29.
MLA	J. L. Yang,et al."Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors".Progress in Quantum Electronics 83(2022):29.

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