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Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 857, 期号: 13
作者:  J. H. Yin;  D. H. Chen;  H. Yang;  Y. Liu;  D. N. Talwar;  T. L. He;  I. T. Ferguson;  K. Y. He;  L. Y. Wan and Z. C. Feng
浏览  |  Adobe PDF(5258Kb)  |  收藏  |  浏览/下载：243/74  |  提交时间：2022/06/13
A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
作者:  Y. Chen;  Y. Wu;  J. Ben;  K. Jiang;  Y. Jia;  S. Zhang;  H. Zang;  Z. Shi;  B. Duan;  X. Sun and D. Li
浏览  |  Adobe PDF(8619Kb)  |  收藏  |  浏览/下载：208/67  |  提交时间：2022/06/13
Performance improvement of amorphous Ga 2 O 3 ultraviolet photodetector by annealing under oxygen atmosphere 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 840, 页码: 7
作者:  C. Q. Zhou,K. W. Liu,X. Chen,J. H. Feng,J. L. Yang,Z. Z. Zhang,L. Liu,Y. Xia and D. Z. Shen
浏览  |  Adobe PDF(1727Kb)  |  收藏  |  浏览/下载：185/69  |  提交时间：2021/07/06
Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 848, 页码: 10
作者:  Y. Liu,T. Y. He,D. H. Chen,H. Yang,I. T. Ferguson,D. Huang and Z. C. Feng
浏览  |  Adobe PDF(2392Kb)  |  收藏  |  浏览/下载：117/21  |  提交时间：2021/07/06
Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
浏览  |  Adobe PDF(1409Kb)  |  收藏  |  浏览/下载：220/65  |  提交时间：2020/08/24
Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
浏览  |  Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：204/63  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
浏览  |  Adobe PDF(2881Kb)  |  收藏  |  浏览/下载：208/76  |  提交时间：2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
A comparative study on electroluminescence from ZnO-based double heterojunction light emitting diodes grown on different lattice mismatch substrates 期刊论文
Journal of Alloys and Compounds, 2013, 卷号: 575
作者:  Li Y.;  Yao B.;  Deng R.;  Li B.;  Zhang Z.;  Shan C.;  Zhao D.;  Shen D.
Adobe PDF(1447Kb)  |  收藏  |  浏览/下载：444/100  |  提交时间：2014/05/14
Influence of Zn/O ratio on structural, electrical and optical properties of ZnO thin films fabricated by plasma-assisted molecular beam epitaxy 期刊论文
Journal of Alloys and Compounds, 2010, 卷号: 503, 期号: 1, 页码: 155-158
作者:  Zhang B. Y.;  Yao B.;  Wang S. P.;  Li Y. F.;  Shan C. X.;  Zhang J. Y.;  Li B. H.;  Zhang Z. Z.;  Shen D. Z.
Adobe PDF(610Kb)  |  收藏  |  浏览/下载：628/148  |  提交时间：2012/10/21