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Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device 期刊论文
ACS Applied Materials and Interfaces, 2023, 卷号: 15, 期号: 26, 页码: 31954-31965
作者:  Y. Chen, Z. Shi, S. Zhang, Y. Yue, H. Zang, J. Ben, K. Jiang, Y. Jia, X. Sun and D. Li
浏览  |  Adobe PDF(9585Kb)  |  收藏  |  浏览/下载：18/5  |  提交时间：2024/07/01
Nanoscale phase separation on an AlGaN surface characterized by scanning diffusion microscopy 期刊论文
Optics Express, 2023, 卷号: 31, 期号: 9, 页码: 14945-14953
作者:  B. Liu;  Z. Liu;  G. Xu;  W. Song;  C. Zhang;  K. Chen;  S. Han;  X. Sun;  D. Li and K. Xu
浏览  |  Adobe PDF(32218Kb)  |  收藏  |  浏览/下载：6/2  |  提交时间：2024/07/03
Rapid inactivation of human respiratory RNA viruses by deep ultraviolet irradiation from light-emitting diodes on a high-temperature-annealed AlN/Sapphire template 期刊论文
Opto-Electronic Advances, 2023, 卷号: 6, 期号: 9
作者:  K. Jiang;  S. Liang;  X. Sun;  J. Ben;  L. Qu;  S. Zhang;  Y. Chen;  Y. Zheng;  K. Lan;  D. Li and K. Xu
浏览  |  Adobe PDF(4695Kb)  |  收藏  |  浏览/下载：5/2  |  提交时间：2024/07/03
The AlN lattice-polarity inversion in a high-temperature-annealed c-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphire 期刊论文
Nanoscale Advances, 2023, 卷号: 6, 期号: 2, 页码: 418-427
作者:  K. Jiang;  J. Ben;  X. Sun;  Z. Shi;  X. Wang;  T. Fang;  S. Zhang;  S. Lv;  Y. Chen;  Y. Jia;  H. Zang;  M. Liu and D. Li
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Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation 期刊论文
Acs Applied Materials & Interfaces, 2022, 卷号: 14, 期号: 33, 页码: 37947-37957
作者:  Y. Chen;  H. Zang;  S. L. Zhang;  Z. M. Shi;  J. W. Ben;  K. Jiang;  Y. P. Jia;  M. R. Liu;  D. B. Li and X. J. Sun
浏览  |  Adobe PDF(9063Kb)  |  收藏  |  浏览/下载：142/46  |  提交时间：2023/06/14
Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method 期刊论文
Crystal Growth & Design, 2022, 卷号: 22, 期号: 5, 页码: 3462-3470
作者:  D. Y. Fu;  D. Lei;  Z. Li;  G. Zhang;  J. L. Huang;  X. J. Sun;  Q. K. Wang;  D. B. Li;  J. Wang and L. Wu
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Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping 期刊论文
Physical Chemistry Chemical Physics, 2022, 卷号: 24, 期号: 9, 页码: 5529-5538
作者:  S. Q. Lu;  T. C. Zheng;  K. Jiang;  X. J. Sun;  D. B. Li;  H. Y. Chen;  J. C. Li;  Y. H. Zhou;  D. J. Cai;  S. P. Li;  W. Lin and J. Y. Kang
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Morphology and carrier mobility of high-B-content BxAl1xN ternary alloys from an ab initio global search 期刊论文
Nanoscale, 2022, 卷号: 14, 期号: 31, 页码: 11335-11342
作者:  Z. Qi;  Z. Shi;  H. Zang;  X. Ma;  Y. Yang;  Y. Jia;  K. Jiang;  X. Sun and D. Li
浏览  |  Adobe PDF(1896Kb)  |  收藏  |  浏览/下载：135/54  |  提交时间：2023/06/14
Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors 期刊论文
Progress in Quantum Electronics, 2022, 卷号: 83, 页码: 29
作者:  J. L. Yang;  K. W. Liu;  X. Chen and D. Z. Shen
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Ni-based overall water splitting electrocatalysts prepared via laser-ablation-in-liquids combined with electrophoretic deposition 期刊论文
Materials Today Chemistry, 2022, 卷号: 23, 页码: 15
作者:  A. Shukla;  S. C. Singh;  C. S. Saraj;  G. Verma and C. Guo
浏览  |  Adobe PDF(4237Kb)  |  收藏  |  浏览/下载：162/65  |  提交时间：2023/06/14