Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method

doi:10.1021/acs.cgd.2c00240

CIOMP OpenIR

	Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method
	D. Y. Fu; D. Lei; Z. Li; G. Zhang; J. L. Huang; X. J. Sun; Q. K. Wang; D. B. Li; J. Wang and L. Wu
	2022
发表期刊	Crystal Growth & Design
ISSN	1528-7483
卷号	22 期号:5 页码:3462-3470
摘要	Crack-free and parasitic-free Al-polar aluminum nitride (AlN) single crystals up to Phi 56 mm were iteratively grown by the homoepitaxial physical vapor transport method. The detailed iterative growth processes from the spontaneous AlN boules to Phi 56 mm single crystals were presented. Our growth experiments revealed that stable growth of large Al-polar crystals with good structural quality and UV transparency was possible using a pure tungsten setup. For each iteration, the initial expansion angle, which was dominated by the radial temperature gradient (Delta T-r), reached 50-60 degrees under our specific growth system and growth conditions and then gradually decreased to 10-20 degrees during the growth process. For all as-grown crystals, mirror-like facets with a step-flow growth mode could be observed. However, the {10 (1) over bar0} side planes were strongly suppressed when using larger AlN seeds. Material characterization showed that the full width at half maximum of symmetric and asymmetric high-resolution X-ray diffraction rocking curves was 84-144 arcsec and 45-70 arcsec, respectively. The average etch pit density evaluated by preferential chemical etching was approximately 8.5 x 10(4) cm(-2). The optical transmission spectra revealed that the entire wafer exhibited excellent ultraviolet (UV) transparency, with absorption coefficients of 19-29 cm(-1) in the UV range of 4.43-4.77 eV (260-280 nm).
DOI	10.1021/acs.cgd.2c00240
URL	查看原文
收录类别	sci ; ei
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67188
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	D. Y. Fu,D. Lei,Z. Li,et al. Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method[J]. Crystal Growth & Design,2022,22(5):3462-3470.
APA	D. Y. Fu.,D. Lei.,Z. Li.,G. Zhang.,J. L. Huang.,...&J. Wang and L. Wu.(2022).Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method.Crystal Growth & Design,22(5),3462-3470.
MLA	D. Y. Fu,et al."Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method".Crystal Growth & Design 22.5(2022):3462-3470.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Toward Phi 56 mm Al-（14092KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载