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Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition 期刊论文
Materials Science in Semiconductor Processing, 2024, 卷号: 169, 页码: 7
Authors:  W. Chen, T. Jiao, P. R. Chen, X. M. Dang, Y. Han, H. Yu, X. Dong, Y. T. Zhang and B. L. Zhang
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Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system 期刊论文
Materials Science in Semiconductor Processing, 2020, 卷号: 118, 页码: 5
Authors:  G. H. Tang,F. Yan and X. L. Chen
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Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method 期刊论文
Materials Science in Semiconductor Processing, 2015, 卷号: 29, 页码: 188-192
Authors:  Feng, Q. J.;  S. Liu;  Y. Liu;  H. F. Zhao;  J. Y. Lu;  K. Tang;  R. Li;  K. Xu and H. Y. Guo
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ZnSe nanoparticles of different sizes: Optical and photocatalytic properties 期刊论文
Materials Science in Semiconductor Processing, 2014, 卷号: 27, 页码: 865-872
Authors:  Feng B.;  Cao J.;  Han D. L.;  Liang H. T.;  Yang S.;  Li X. Y.;  Yang J. H.
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Surface state and optical property of sulfur passivated InP 期刊论文
Materials Science in Semiconductor Processing, 2014, 期号: 17, 页码: 33-37
Authors:  Tian S. S.;  Wei Z. P.;  Li Y. F.;  Zhao H. F.;  Fang X.;  Tang J. L.;  Fang D.;  Sun L. J.;  Liu G. J.;  Yao B.;  Ma X. H.
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Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs 期刊论文
Materials Science in Semiconductor Processing, 2014, 期号: 26, 页码: 614-619
Authors:  Yang H.;  Gao J.;  Nakashima H.
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Synthesis and magnetic properties of ZnFe1.97RE0.03O4 (RE = Eu and Nd) nanoparticles 期刊论文
Materials Science in Semiconductor Processing, 2014, 期号: 27, 页码: 854-859
Authors:  Yang S.;  Han D. L.;  Wang Z.;  Liu Y.;  Chen G.;  Luan H. M.;  Bayanheshig;  Yang L. L.
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The effect of Al3 co-doping on the structural, magnetic and optical properties of ZnCoO thin films 期刊论文
Materials Science in Semiconductor Processing, 2011, 卷号: 14, 期号: 1, 页码: 73-77
Authors:  Cao P.;  Bai Y.;  Zhao D. X.;  Shen D. Z.
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A study of two-step growth and properties of In0.82Ga0.18As on InP 期刊论文
Materials Science in Semiconductor Processing, 2009, 卷号: 12, 期号: 4—5, 页码: 156-160
Authors:  Zhang T. M.;  Miao G. G.;  Jin Y. X.;  Yu S. Z.;  Jiang H.;  Li Z. M.;  Song H.
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