Surface state and optical property of sulfur passivated InP

	Surface state and optical property of sulfur passivated InP
	Tian S. S.; Wei Z. P.; Li Y. F.; Zhao H. F.; Fang X.; Tang J. L.; Fang D.; Sun L. J.; Liu G. J.; Yao B.; Ma X. H.
	2014
发表期刊	Materials Science in Semiconductor Processing
ISSN	ISBN/1369-8001
期号	17 页码:33-37
摘要	We report photoluminescence (PL) of indium phosphide (InP) surface passivated by sulfur (S). A three-fold enhancement of band edge emission from the bulk InP was observed after the InP was passivated by ammonium sulfide ((NH4)(2)S) solution for 10 min. X-ray photoelectron spectroscopy measurements indicate that the oxide at InP surface is removed after being sulfurized in (NH4)2S solution. However, the enhancement significantly decreases for a longer treatment time, which is maybe due to a thick S layer deposited at the InP surface resulting in low light transmission. (C) 2013 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44424
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Tian S. S.,Wei Z. P.,Li Y. F.,et al. Surface state and optical property of sulfur passivated InP[J]. Materials Science in Semiconductor Processing,2014(17):33-37.
APA	Tian S. S..,Wei Z. P..,Li Y. F..,Zhao H. F..,Fang X..,...&Ma X. H..(2014).Surface state and optical property of sulfur passivated InP.Materials Science in Semiconductor Processing(17),33-37.
MLA	Tian S. S.,et al."Surface state and optical property of sulfur passivated InP".Materials Science in Semiconductor Processing .17(2014):33-37.

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