Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Surface state and optical property of sulfur passivated InP | |
Tian S. S.; Wei Z. P.; Li Y. F.; Zhao H. F.; Fang X.; Tang J. L.; Fang D.; Sun L. J.; Liu G. J.; Yao B.; Ma X. H. | |
2014 | |
发表期刊 | Materials Science in Semiconductor Processing
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ISSN | ISBN/1369-8001 |
期号 | 17页码:33-37 |
摘要 | We report photoluminescence (PL) of indium phosphide (InP) surface passivated by sulfur (S). A three-fold enhancement of band edge emission from the bulk InP was observed after the InP was passivated by ammonium sulfide ((NH4)(2)S) solution for 10 min. X-ray photoelectron spectroscopy measurements indicate that the oxide at InP surface is removed after being sulfurized in (NH4)2S solution. However, the enhancement significantly decreases for a longer treatment time, which is maybe due to a thick S layer deposited at the InP surface resulting in low light transmission. (C) 2013 Elsevier Ltd. All rights reserved. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/44424 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Tian S. S.,Wei Z. P.,Li Y. F.,et al. Surface state and optical property of sulfur passivated InP[J]. Materials Science in Semiconductor Processing,2014(17):33-37. |
APA | Tian S. S..,Wei Z. P..,Li Y. F..,Zhao H. F..,Fang X..,...&Ma X. H..(2014).Surface state and optical property of sulfur passivated InP.Materials Science in Semiconductor Processing(17),33-37. |
MLA | Tian S. S.,et al."Surface state and optical property of sulfur passivated InP".Materials Science in Semiconductor Processing .17(2014):33-37. |
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