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Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method
Feng, Q. J.; S. Liu; Y. Liu; H. F. Zhao; J. Y. Lu; K. Tang; R. Li; K. Xu and H. Y. Guo
2015
发表期刊Materials Science in Semiconductor Processing
卷号29页码:188-192
摘要ZnO thin films with different Sb doping concentrations were prepared on n-GaN/Al2O3 substrates by simple chemical vapor deposition. Field emission scanning electron microscopy (FE-SEM) showed that the morphologies of ZnO thin films were rougher and the size of the crystal grains reduced with increasing Sb concentration. The X-ray diffraction measurements indicated that the (002) diffraction peak positions of samples shifted gradually towards the lower angle side, which explained the substitution of Sb3+ into the Zn site by Sb doping. In addition, Hall measurement results indicated that Sb doped ZnO thin films had p-type conductivity, and the optimal Sb2O3/ZnO mass ratio for p-type ZnO thin film was approximately 1:4. Optical absorption spectrum measurement indicated that the energy gaps of the samples were evidently narrowed with increasing Sb doping concentration. (C) 2014 Elsevier Ltd. All rights reserved.
收录类别SCI ; EI
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/55245
专题中科院长春光机所知识产出
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Feng, Q. J.,S. Liu,Y. Liu,et al. Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method[J]. Materials Science in Semiconductor Processing,2015,29:188-192.
APA Feng, Q. J..,S. Liu.,Y. Liu.,H. F. Zhao.,J. Y. Lu.,...&K. Xu and H. Y. Guo.(2015).Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method.Materials Science in Semiconductor Processing,29,188-192.
MLA Feng, Q. J.,et al."Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method".Materials Science in Semiconductor Processing 29(2015):188-192.
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