Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs | |
Yang H.![]() ![]() | |
2014 | |
发表期刊 | Materials Science in Semiconductor Processing
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ISSN | ISBN/1369-8001 |
期号 | 26页码:614-619 |
摘要 | Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET. (C) 2014 Elsevier Ltd. All rights reserved. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/44112 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Yang H.,Gao J.,Nakashima H.. Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs[J]. Materials Science in Semiconductor Processing,2014(26):614-619. |
APA | Yang H.,Gao J.,&Nakashima H..(2014).Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs.Materials Science in Semiconductor Processing(26),614-619. |
MLA | Yang H.,et al."Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs".Materials Science in Semiconductor Processing .26(2014):614-619. |
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