Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

	Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs
	Yang H.; Gao J.; Nakashima H.
	2014
发表期刊	Materials Science in Semiconductor Processing
ISSN	ISBN/1369-8001
期号	26 页码:614-619
摘要	Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. Using ZrGe as S/D, the operation of Schottky Ge p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET. (C) 2014 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44112
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yang H.,Gao J.,Nakashima H.. Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs[J]. Materials Science in Semiconductor Processing,2014(26):614-619.
APA	Yang H.,Gao J.,&Nakashima H..(2014).Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs.Materials Science in Semiconductor Processing(26),614-619.
MLA	Yang H.,et al."Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs".Materials Science in Semiconductor Processing .26(2014):614-619.

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