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Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation 期刊论文
Acs Applied Materials & Interfaces, 2022, 卷号: 14, 期号: 33, 页码: 37947-37957
作者:  Y. Chen;  H. Zang;  S. L. Zhang;  Z. M. Shi;  J. W. Ben;  K. Jiang;  Y. P. Jia;  M. R. Liu;  D. B. Li and X. J. Sun
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Introducing voids around the interlayer of AlN by high temperature annealing 期刊论文
Chinese Physics B, 2022, 卷号: 31, 期号: 7, 页码: 6
作者:  J. W. Ben;  J. L. Luo;  Z. C. Lin;  X. J. Sun;  X. K. Liu and X. H. Li
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Sodium birnessite@graphene hierarchical structures for ultrafast sodium ion storage 期刊论文
Journal of Electroanalytical Chemistry, 2022, 卷号: 906, 页码: 8
作者:  J. W. Ben;  Y. P. Jia;  T. Wu;  X. K. Liu and X. H. Li
浏览  |  Adobe PDF(2902Kb)  |  收藏  |  浏览/下载:35/22  |  提交时间:2023/06/14
Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文
Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6
作者:  C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors 期刊论文
Nanoscale Advances, 2020, 卷号: 2, 期号: 5, 页码: 1854-1858
作者:  Y. Wu,X. J. Sun,Z. M. Shi,Y. P. Jia,K. Jiang,J. W. Ben,C. H. Kai,Y. Wang,W. Lu and D. B. Li
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Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN 期刊论文
Applied Surface Science, 2020, 卷号: 520, 页码: 9
作者:  K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li
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Polarization-enhanced AlGaN solar-blind ultraviolet detectors 期刊论文
Photonics Research, 2020, 卷号: 8, 期号: 7, 页码: 1243-1252
作者:  K. Jiang,X. J. Sun,Z. H. Zhang,J. W. Ben,J. M. Che,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,W. Lv and D. B. Li
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The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
浏览  |  Adobe PDF(1823Kb)  |  收藏  |  浏览/下载:108/38  |  提交时间:2021/07/06