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Full-duplex light communication with a monolithic multicomponent system 期刊论文
LIGHT-SCIENCE & APPLICATIONS, 2018, 卷号: 7, 页码: 7
作者:  Wang, Yongjin;  Wang, Xin;  Zhu, Bingcheng;  Shi, Zheng;  Yuan, Jialei;  Gao, Xumin;  Liu, Yuhuai;  Sun, Xiaojuan;  Li, Dabing;  Amano, Hiroshi
Adobe PDF(1608Kb)  |  收藏  |  浏览/下载：405/116  |  提交时间：2019/08/26
si substrate  diode  integration  electron  devices  Optics  
Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser 期刊论文
Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 5
作者:  Li Xiang;  Wang Hong;  Qiao Zhongliang;  Zhang Yu;  Xu Yingqiang;  Niu Zhichuan;  Tong Cunzhu;  Liu Chongyang
浏览  |  Adobe PDF(404Kb)  |  收藏  |  浏览/下载：368/99  |  提交时间：2019/09/17
Gallium compounds  Antimony compounds  III-V semiconductors  Indium antimonides  Quantum well lasers  Semiconductor lasers  Semiconductor quantum wells  
Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence 期刊论文
Materials, 2018, 卷号: 11, 期号: 6, 页码: 11
作者:  Song, Y.;  Zhang, L. G.;  Zeng, Y. G.;  Qin, L.;  Zhou, Y. L.;  Ning, Y. Q.;  Wang, L. J.
浏览  |  Adobe PDF(2963Kb)  |  收藏  |  浏览/下载：456/194  |  提交时间：2019/09/17
AlGaInAs quantum well  metal organic chemical vapor deposition  cathodeluminescence  thermal treatment  segregation  lasers  inp  semiconductors  dislocations  ingaalas  epitaxy  origin  band  Materials Science  
Light-Emitting Devices Modulated by Multilevel Resistive Memories 期刊论文
Acs Photonics, 2018, 卷号: 5, 期号: 3, 页码: 1006-1011
作者:  Yang, X.;  Shan, C. X.;  Liu, Q.;  Jiang, M. M.;  Lu, Y. J.;  Xie, X. H.;  Li, B. H.;  Shen, D. Z.
浏览  |  Adobe PDF(581Kb)  |  收藏  |  浏览/下载：339/102  |  提交时间：2019/09/17
light-emitting devices  resistive random access memories  multilevel  switching  diodes  xps  emission  blue  Science & Technology - Other Topics  Materials Science  Optics  Physics  
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.;  Wang, Y.;  Wu, Y.;  Kai, C. H.;  Li, D. B.
浏览  |  Adobe PDF(4418Kb)  |  收藏  |  浏览/下载：422/131  |  提交时间：2019/09/17
light-emitting-diodes  screw dislocations  threading dislocations  phase  epitaxy  gan  films  algan  core  edge  generation  Chemistry  Crystallography  
Room-temperature electrically pumped InGaN-based microdisk laser grown on Si 期刊论文
Optics Express, 2018, 卷号: 26, 期号: 4, 页码: 5043-5051
作者:  Feng, M. X.;  He, J. L.;  Sun, Q.;  Gao, H. W.;  Li, Z. C.;  Zhou, Y.;  Liu, J. P.;  Zhang, S. M.;  Li, D. Y.;  Zhang, L. Q.;  Sun, X. J.;  Li, D. B.;  Wang, H. B.;  Ikeda, M.;  Wang, R. X.;  Yang, H.
浏览  |  Adobe PDF(2951Kb)  |  收藏  |  浏览/下载：393/115  |  提交时间：2019/09/17
high-power  gan  diodes  Optics  
High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes 期刊论文
Journal of Materials Science-Materials in Electronics, 2018, 卷号: 29, 期号: 11, 页码: 9077-9082
作者:  Han, W. Y.;  Zhang, Z. W.;  Li, Z. M.;  Chen, Y. R.;  Song, H.;  Miao, G. Q.;  Fan, F.;  Chen, H. F.;  Liu, Z.;  Jiang, H.
浏览  |  Adobe PDF(1849Kb)  |  收藏  |  浏览/下载：476/131  |  提交时间：2019/09/17
p-i-n  photodetectors  template  films  Engineering  Materials Science  Physics  
The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD 期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 18, 页码: 4936-4942
作者:  Chen, Y. R.;  Zhang, Z. W.;  Jiang, H.;  Li, Z. M.;  Miao, G. Q.;  Song, H.
浏览  |  Adobe PDF(4100Kb)  |  收藏  |  浏览/下载：428/140  |  提交时间：2019/09/17
threading dislocations  nucleation layer  gan  temperature  sapphire  Materials Science  Physics  
Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
Acs Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, M. X.;  Li, Z. C.;  Wang, J.;  Zhou, R.;  Sun, Q.;  Sun, X. J.;  Li, D. B.;  Gao, H. W.;  Zhou, Y.;  Zhang, S. M.;  Li, D. Y.;  Zhang, L. Q.;  Liu, J. P.;  Wang, H. B.;  Ikeda, M.;  Zheng, X. H.;  Yang, H.
浏览  |  Adobe PDF(525Kb)  |  收藏  |  浏览/下载：389/124  |  提交时间：2019/09/17
AlGaN  near-ultraviolet  laser  Si substrate  stress  defect  light-emitting-diodes  gan  efficiency  Science & Technology - Other Topics  Materials Science  Optics  Physics  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
浏览  |  Adobe PDF(1681Kb)  |  收藏  |  浏览/下载：459/132  |  提交时间：2019/09/17
Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering