Light-Emitting Devices Modulated by Multilevel Resistive Memories

doi:10.1021/acsphotonics.7b01310

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	Light-Emitting Devices Modulated by Multilevel Resistive Memories
	Yang, X.; Shan, C. X.; Liu, Q.; Jiang, M. M.; Lu, Y. J.; Xie, X. H.; Li, B. H.; Shen, D. Z.
	2018
发表期刊	Acs Photonics
ISSN	2330-4022
卷号	5 期号:3 页码:1006-1011
摘要	We demonstrate for the first time that multilevel resistive random access memories (RRAMs) can be utilized to modulate the luminescence of light-emitting devices (LEDs) in Au/GaOx/p-GaN/n-ZnO structures. In these structures, Au/GaOx/p-GaN multilevel RRAMs are integrated with p-GaN/n-ZnO LEDs. The injection current of the LEDs can be controlled by the resistance states of the multilevel RRAMs, thus modulating the luminous intensity. The results reported in this paper may offer a route to more integrated and low-cost LED displays. Moreover, our approach may provide a clue for the diversified applications by integrating RRAMs with other functional electronics.
关键词	light-emitting devices resistive random access memories multilevel switching diodes xps emission blue Science & Technology - Other Topics Materials Science Optics Physics
DOI	10.1021/acsphotonics.7b01310
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61046
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Yang, X.,Shan, C. X.,Liu, Q.,et al. Light-Emitting Devices Modulated by Multilevel Resistive Memories[J]. Acs Photonics,2018,5(3):1006-1011.
APA	Yang, X..,Shan, C. X..,Liu, Q..,Jiang, M. M..,Lu, Y. J..,...&Shen, D. Z..(2018).Light-Emitting Devices Modulated by Multilevel Resistive Memories.Acs Photonics,5(3),1006-1011.
MLA	Yang, X.,et al."Light-Emitting Devices Modulated by Multilevel Resistive Memories".Acs Photonics 5.3(2018):1006-1011.

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