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Emerging low-dimensional materials for nanoelectromechanical systems resonators 期刊论文
Materials Research Letters, 2023, 卷号: 11, 期号: 1, 页码: 21-52
作者:  S. Y. Ban;  X. C. Nie;  Z. H. Lei;  J. B. Yi;  A. Y. Vinu;  Y. Bao and Y. P. Liu
浏览  |  Adobe PDF(6746Kb)  |  收藏  |  浏览/下载:113/42  |  提交时间:2023/06/14
Two-dimensional reconfigurable electronics enabled by asymmetric floating gate 期刊论文
Nano Research, 2022, 卷号: 15, 期号: 5, 页码: 4439-4447
作者:  T. Y. Jin;  J. Gao;  Y. A. Wang;  Y. Zheng;  S. Sun;  L. Liu;  M. Lin and W. Chen
Adobe PDF(4719Kb)  |  收藏  |  浏览/下载:112/47  |  提交时间:2023/06/14
Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS 期刊论文
Nano Letters, 2021, 卷号: 21, 期号: 20, 页码: 8800-8807
作者:  X. F. Lu;  Y. Zhang;  N. Wang;  S. Luo;  K. Peng;  L. Wang;  H. Chen;  W. Gao;  X. H. Chen;  Y. Bao;  G. Liang and K. P. Loh
Adobe PDF(6423Kb)  |  收藏  |  浏览/下载:110/47  |  提交时间:2022/06/13
Laser-assisted two dimensional material electronic and optoelectronic devices 期刊论文
Journal of Materials Chemistry C, 2021, 卷号: 9, 期号: 8, 页码: 2599-2619
作者:  B.-W. Su;  Z. X.-L;  X. W;  G. H.-W;  Z. Y.-Z;  L. Z.-B and T. J.-G
Adobe PDF(9853Kb)  |  收藏  |  浏览/下载:76/25  |  提交时间:2022/06/13
Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao;  C.X.Zhu
Adobe PDF(1549Kb)  |  收藏  |  浏览/下载:201/63  |  提交时间:2020/08/24
chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics  
Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour 期刊论文
Journal of Colloid and Interface Science, 2019, 卷号: 553, 页码: 682-687
作者:  B.Sun;  T.Guo;  G.D.Zhou;  S.Ranjan;  W.T.Hou;  Y.M.Hou;  Y.Zhao
Adobe PDF(2093Kb)  |  收藏  |  浏览/下载:160/47  |  提交时间:2020/08/24
Resistive switching,Tunneling,Photon-generated carrier,Schottky,barrier,Memory device,wo3 nanoflakes,resistance,mechanism,device,Chemistry  
Effect of crystalline state on conductive filaments forming process in resistive switching memory devices 期刊论文
Materials Today Communications, 2019, 卷号: 20, 期号: 5
作者:  T.Guo;  H.Elshekh;  Z.Yu;  B.Yu;  D.Wang;  M.S.Kadhim;  Y.Z.Chen
Adobe PDF(1526Kb)  |  收藏  |  浏览/下载:179/48  |  提交时间:2020/08/24
Cu(In, Ga)Se-2,Crystalline state,Conductive filaments,Memory device,current-voltage characteristics  
Light-Emitting Devices Modulated by Multilevel Resistive Memories 期刊论文
Acs Photonics, 2018, 卷号: 5, 期号: 3, 页码: 1006-1011
作者:  Yang, X.;  Shan, C. X.;  Liu, Q.;  Jiang, M. M.;  Lu, Y. J.;  Xie, X. H.;  Li, B. H.;  Shen, D. Z.
Adobe PDF(581Kb)  |  收藏  |  浏览/下载:332/101  |  提交时间:2019/09/17
light-emitting devices  resistive random access memories  multilevel  switching  diodes  xps  emission  blue  Science & Technology - Other Topics  Materials Science  Optics  Physics  
Overwhelming coexistence of negative differential resistance effect and RRAM 期刊论文
Physical Chemistry Chemical Physics, 2018, 卷号: 20, 期号: 31, 页码: 20635-20640
作者:  Guo, T.;  Sun, B.;  Zhou, Y.;  Zhao, H. B.;  Lei, M.;  Zhao, Y.
Adobe PDF(4365Kb)  |  收藏  |  浏览/下载:278/86  |  提交时间:2019/09/17
resistive switching memories  film  nanoparticles  mechanisms  filaments  devices  Chemistry  Physics  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
Adobe PDF(1681Kb)  |  收藏  |  浏览/下载:450/132  |  提交时间:2019/09/17
Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering