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Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence
Song, Y.; Zhang, L. G.; Zeng, Y. G.; Qin, L.; Zhou, Y. L.; Ning, Y. Q.; Wang, L. J.
2018
Source PublicationMaterials
ISSN1996-1944
Volume11Issue:6Pages:11
AbstractAn aluminum gallium indium arsenic (AlGaInAs) material system is indispensable as the active layer of diode lasers emitting at 1310 or 1550 nm, which are used in optical fiber communications. However, the course of the high-temperature instability of a quantum well structure, which is closely related to the diffusion of indium atoms, is still not clear due to the system's complexity. The diffusion process of indium atoms was simulated by thermal treatment, and the changes in the optical and structural properties of an AlGaInAs quantum well are investigated in this paper. Compressive strained Al0.07Ga0.22In0.71As quantum wells were treated at 170 degrees C with different heat durations. A significant decrement of photoluminescence decay time was observed on the quantum well of a sample that was annealed after 4 h. The microscopic cathodoluminescent (CL) spectra of these quantum wells were measured by scanning electron microscope-cathodoluminescence (SEM-CL). The thermal treatment effect on quantum wells was characterized via CL emission peak wavelength and energy density distribution, which were obtained by spatially resolved cathodoluminescence. The defect area was clearly observed in the Al0.07Ga0.22In0.71As quantum wells layer after thermal treatment. CL emissions from the defect core have higher emission energy than those from the defect-free regions. The defect core distribution, which was associated with indium segregation gradient distribution, showed asymmetric character.
KeywordAlGaInAs quantum well metal organic chemical vapor deposition cathodeluminescence thermal treatment segregation lasers inp semiconductors dislocations ingaalas epitaxy origin band Materials Science
DOI10.3390/ma11061049
Indexed BySCI ; EI
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Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/61058
Collection中国科学院长春光学精密机械与物理研究所
Recommended Citation
GB/T 7714
Song, Y.,Zhang, L. G.,Zeng, Y. G.,et al. Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence[J]. Materials,2018,11(6):11.
APA Song, Y..,Zhang, L. G..,Zeng, Y. G..,Qin, L..,Zhou, Y. L..,...&Wang, L. J..(2018).Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence.Materials,11(6),11.
MLA Song, Y.,et al."Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence".Materials 11.6(2018):11.
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