Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence

doi:10.3390/ma11061049

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	Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence
	Song, Y.; Zhang, L. G.; Zeng, Y. G.; Qin, L.; Zhou, Y. L.; Ning, Y. Q.; Wang, L. J.
	2018
发表期刊	Materials
ISSN	1996-1944
卷号	11 期号:6 页码:11
摘要	An aluminum gallium indium arsenic (AlGaInAs) material system is indispensable as the active layer of diode lasers emitting at 1310 or 1550 nm, which are used in optical fiber communications. However, the course of the high-temperature instability of a quantum well structure, which is closely related to the diffusion of indium atoms, is still not clear due to the system's complexity. The diffusion process of indium atoms was simulated by thermal treatment, and the changes in the optical and structural properties of an AlGaInAs quantum well are investigated in this paper. Compressive strained Al0.07Ga0.22In0.71As quantum wells were treated at 170 degrees C with different heat durations. A significant decrement of photoluminescence decay time was observed on the quantum well of a sample that was annealed after 4 h. The microscopic cathodoluminescent (CL) spectra of these quantum wells were measured by scanning electron microscope-cathodoluminescence (SEM-CL). The thermal treatment effect on quantum wells was characterized via CL emission peak wavelength and energy density distribution, which were obtained by spatially resolved cathodoluminescence. The defect area was clearly observed in the Al0.07Ga0.22In0.71As quantum wells layer after thermal treatment. CL emissions from the defect core have higher emission energy than those from the defect-free regions. The defect core distribution, which was associated with indium segregation gradient distribution, showed asymmetric character.
关键词	AlGaInAs quantum well metal organic chemical vapor deposition cathodeluminescence thermal treatment segregation lasers inp semiconductors dislocations ingaalas epitaxy origin band Materials Science
DOI	10.3390/ma11061049
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61058
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Song, Y.,Zhang, L. G.,Zeng, Y. G.,et al. Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence[J]. Materials,2018,11(6):11.
APA	Song, Y..,Zhang, L. G..,Zeng, Y. G..,Qin, L..,Zhou, Y. L..,...&Wang, L. J..(2018).Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence.Materials,11(6),11.
MLA	Song, Y.,et al."Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence".Materials 11.6(2018):11.

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