Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process

doi:10.3389/fmats.2022.1128468

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	Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process
	Q. Wang, D. Lei, J. Huang, X. Sun, D. Li, Z. Zhou and W. L
	2023
发表期刊	Frontiers in Materials
ISSN	22968016
卷号	9
摘要	Single crystalline aluminum nitride (sc-AlN or AlN) boules with a diameter of 3-inch (Φ76 mm) were successfully prepared by the physical vapor transport (PVT) process. The initial homoepitaxial growth run was performed on an aluminum nitride seed sliced from a Φ51 mm aluminum nitride boule, and diameter enlargement was conducted iteratively via the lateral expansion technique until a Φ76 mm boule was achieved. During the diameter expansion growth runs, the crystal shape transitioned from a hexagonal pyramid to a cylindrical pyramid. After the standard slicing and wafering processes, the as-obtained substrates were characterized by high-resolution X-ray diffraction (HRXRD), preferential chemical etching, and optical spectroscopy. The characterization results revealed that the aluminum nitride substrates showed good crystallinity and excellent UV transparency, although a slight quality deterioration was observed when the crystal size was expanded from Φ51 to Φ76 mm, while the deep-UV (DUV) transparency remained very similar to that of the aluminum nitride seeds. The Φ76 mm aluminum nitride boules obtained in this study are an important milestone towards achieving Φ100 mm (4-inch) aluminum nitride, which are essential for the rapid commercialization of deep-UV optoelectronics and ultra-wide bandgap (UWBG) electronics. Copyright © 2023 Wang, Lei, Huang, Sun, Li, Zhou and Wu.
DOI	10.3389/fmats.2022.1128468
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收录类别	sci ; ei
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67952
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Q. Wang, D. Lei, J. Huang, X. Sun, D. Li, Z. Zhou and W. L. Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process[J]. Frontiers in Materials,2023,9.
APA	Q. Wang, D. Lei, J. Huang, X. Sun, D. Li, Z. Zhou and W. L.(2023).Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process.Frontiers in Materials,9.
MLA	Q. Wang, D. Lei, J. Huang, X. Sun, D. Li, Z. Zhou and W. L."Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process".Frontiers in Materials 9(2023).

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