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Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 857, 期号: 13
作者:  J. H. Yin;  D. H. Chen;  H. Yang;  Y. Liu;  D. N. Talwar;  T. L. He;  I. T. Ferguson;  K. Y. He;  L. Y. Wan and Z. C. Feng
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Speed enhancement of ultraviolet photodetector base on ZnO quantum dots by oxygen adsorption on surface defects 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
作者:  H. Ma;  K. Liu;  Z. Cheng;  Z. Zheng;  Y. Liu;  P. Zhang;  X. Chen;  D. Liu;  L. Liu and D. Shen
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Mechanism of enhanced power conversion efficiency of Cu2ZnSn(S, Se)4 solar cell by cadmium surface diffusion doping 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 876
作者:  H. Luan;  B. Yao;  Y. Li;  R. Liu;  Z. Ding;  Z. Zhang;  H. Zhao and L. Zhang
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Synthesis of Multilayer InSe0.82Te0.18 alloy for high performance near-infrared photodetector 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 815, 页码: 6
作者:  M. M. Yu,H. Li,F. Gao,Y. X. Hu,L. F. Wang,P. G. Hu and W. Feng
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Impact of Al2O3 stress liner on two-dimensional SnS2 nanosheet for photodetector application 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 830, 页码: 7
作者:  X. K. Liu,X. H. Deng,X. H. Li,H. C. Chiu,Y. X. Chen,V. D. Botcha,M. Wang,W. J. Yu and C. H. Lin
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Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
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Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
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GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
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Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering  
Giant enhancement of ultraviolet near-band-edge emission from a wide-bandgap oxide with dipole-forbidden bandgap transition 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 705
作者:  Zhou, H.;  R. Deng;  Y. F. Li;  B. Yao;  J. M. Qin;  J. Song;  Y. Q. Li;  Z. H. Ding and L. Liu
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The dominant role of excitation diffusion in energy transfer upconversion of Lu2O3: Tm3+, y(3+) 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 704
作者:  Wu, D. A.;  Z. D. Hao;  W. G. Xiao;  X. Zhang;  G. H. Pan;  L. L. Zhang;  Y. S. Luo;  L. G. Zhang;  H. F. Zhao and J. H. Zhang
浏览  |  Adobe PDF(1345Kb)  |  收藏  |  浏览/下载:248/40  |  提交时间:2018/06/13