Applications of ZnO quantum dots (QDs) in photodetectors are generally limited by a slower response speed and a higher dark current. The corresponding mechanism is not very clear, and how to resolve these problems is still in big challenge. Herein, we have demonstrated a photodetector on 700 nm-thick ZnO QDs film with a large number of oxygen vacancy defects by adjusting the ratio of the reactants and the reaction time. The device exhibits a quick response speed with a rise time of ~1.00 s and a recovery time of ~0.19 s. Meanwhile, the dark current and the responsivity under 730 W/cm2 UV light illumination were found to be 20 pA and 260 mA/W under 10 V bias, respectively. The mechanism of these phenomena has been investigated, and the fast response speed of ZnO QDs photodetector in the air should originate from the adsorption/desorption of oxygen on the surface oxygen vacancy defects of ZnO QDs. The findings in this work can be used to guide design of high-performance photodetectors based on ZnO QDs and other nanomaterials with large surface to volume ratio. 2021 Elsevier B.V.
H. Ma,K. Liu,Z. Cheng,et al. Speed enhancement of ultraviolet photodetector base on ZnO quantum dots by oxygen adsorption on surface defects[J]. Journal of Alloys and Compounds,2021,868.
APA
H. Ma.,K. Liu.,Z. Cheng.,Z. Zheng.,Y. Liu.,...&L. Liu and D. Shen.(2021).Speed enhancement of ultraviolet photodetector base on ZnO quantum dots by oxygen adsorption on surface defects.Journal of Alloys and Compounds,868.
MLA
H. Ma,et al."Speed enhancement of ultraviolet photodetector base on ZnO quantum dots by oxygen adsorption on surface defects".Journal of Alloys and Compounds 868(2021).
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