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Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation 期刊论文
Chinese Physics B, 2022, 卷号: 31, 期号: 9, 页码: 8
作者:  Z. H. Wang;  Y. J. Zhang;  S. M. Li;  S. Li;  J. J. Zhan;  Y. S. Qian;  F. Shi;  H. C. Cheng;  G. C. Jiao and Y. G. Zeng
浏览  |  Adobe PDF(1023Kb)  |  收藏  |  浏览/下载：107/34  |  提交时间：2023/06/14
Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier 期刊论文
Chinese Physics B, 2022, 卷号: 31, 期号: 10, 页码: 5
作者:  Y. Z. Liu;  K. W. Liu;  J. L. Yang;  Z. Cheng;  D. Y. Han;  Q. Ai;  X. Chen;  Y. X. Zhu;  B. H. Li;  L. Liu and D. Z. Shen
浏览  |  Adobe PDF(933Kb)  |  收藏  |  浏览/下载：138/41  |  提交时间：2023/06/14
Ultraviolet photodetectors based on wide bandgap oxide semiconductor films 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 4, 页码: 11
作者:  C.Q.Zhou;  Q.Ai;  X.Chen;  X.H.Gao;  K.W.Liu;  D.Z.Shen
浏览  |  Adobe PDF(2797Kb)  |  收藏  |  浏览/下载：146/45  |  提交时间：2020/08/24
Photodetector,ultraviolet,oxide semiconductor film,solar-blind photodetector,msm uv photodetector,thin-film,fast-response,optoelectronic properties,performance enhancement,electrical-properties,schottky contacts,crystal-structure,zno,nanowire,Physics  
Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 4, 页码: 6
作者:  C.Yang;  H.W.Liang;  Z.Z.Zhang;  X.C.Xia;  H.Q.Zhang;  R.S.Shen
浏览  |  Adobe PDF(1090Kb)  |  收藏  |  浏览/下载：167/48  |  提交时间：2020/08/24
Ga2O3 single crystal,solar-blind,photodetector,high temperature,ultraviolet photodetectors,growth,performance,detectors,film,Physics  
ZnO-based deep-ultraviolet light-emitting devices 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 4
作者:  Lu, Y. J.;  Z. F. Shi;  C. X. Shan and D. Z. Shen
浏览  |  Adobe PDF(4999Kb)  |  收藏  |  浏览/下载：291/69  |  提交时间：2018/06/13
Ultraviolet emissions realized in ZnO via an avalanche multiplication process 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 7
作者:  Yu J.;  Shan C. X.;  Shen H.;  Zhang X. W.;  Wang S. P.;  Shen D. Z.
Adobe PDF(502Kb)  |  收藏  |  浏览/下载：337/67  |  提交时间：2014/05/14
Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs 期刊论文
Chinese Physics B, 2010, 卷号: 19, 期号: 12
作者:  Li D. B.;  Hu W. G.;  Hideto M.;  Kazumasa H.;  Song H.
Adobe PDF(955Kb)  |  收藏  |  浏览/下载：369/71  |  提交时间：2012/10/21