ZnO-based deep-ultraviolet light-emitting devices

	ZnO-based deep-ultraviolet light-emitting devices
	Lu, Y. J.; Z. F. Shi; C. X. Shan and D. Z. Shen
	2017
发表期刊	Chinese Physics B
卷号	26 期号:4
摘要	Deep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential applications. Zinc-oxide-based materials, which have wide bandgap and large exciton binding energy, have potential applications in high-performance DUV LEDs. To realize such optoelectronic devices, the modulation of the bandgap is required. This has been demonstrated by the developments of MgxZn(1-x)O and BexZn(1-x)O alloys for the larger bandgap materials. Many efforts have been made to obtain DUV LEDs, and promising successes have been achieved continuously. In this article, we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59125
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Lu, Y. J.,Z. F. Shi,C. X. Shan and D. Z. Shen. ZnO-based deep-ultraviolet light-emitting devices[J]. Chinese Physics B,2017,26(4).
APA	Lu, Y. J.,Z. F. Shi,&C. X. Shan and D. Z. Shen.(2017).ZnO-based deep-ultraviolet light-emitting devices.Chinese Physics B,26(4).
MLA	Lu, Y. J.,et al."ZnO-based deep-ultraviolet light-emitting devices".Chinese Physics B 26.4(2017).